MT29F256G08CBCBBWP-10M:B TR

The MT29F256G08CBCBBWP-10M:B TR is a 256 Gbit parallel NAND flash memory device (FLASH - NAND (MLC)) provided in a 48-TSOP I package. It offers a 32G × 8 memory organization and a parallel memory interface for systems that require high-density non-volatile storage.

Designed to operate from 2.7 V to 3.6 V and across a 0 °C to 70 °C ambient range, this device targets applications where standard-temperature operation, a parallel interface, and a compact 48-TFSOP footprint are required.

Key Features

• Memory Type & Technology Non-volatile FLASH - NAND (MLC) memory, providing multi-level cell storage in a parallel NAND architecture.
• Density & Organization 256 Gbit capacity organized as 32G × 8, enabling large on-board storage within a single package.
• Interface & Performance Parallel memory interface with a listed clock frequency of 100 MHz for synchronous operation with compatible host controllers.
• Power Operating supply voltage range from 2.7 V to 3.6 V, supporting common 3.0 V system rails.
• Package 48-TFSOP (0.724", 18.40 mm width) / 48-TSOP I package, offering a standardized footprint for board-level integration.
• Operating Temperature Specified ambient operating range of 0 °C to 70 °C (TA), suitable for standard-temperature electronic systems.

Typical Applications

• High-density Non-volatile Storage Acts as on-board NAND flash memory for systems requiring 256 Gbit of parallel storage capacity.
• Embedded Systems Integrates into embedded designs that use a parallel memory interface and require multi-level cell NAND storage.
• Compact PCB Designs Fits applications needing a TSOP footprint (48-TSOP I / 48-TFSOP) while delivering large memory capacity.

Unique Advantages

• Large single-package capacity: 256 Gbit in a single 48-TSOP I package reduces board-level component count for designs needing significant storage.
• Parallel interface compatibility: Parallel memory interface and 100 MHz clock frequency facilitate integration with controllers designed for parallel NAND devices.
• Standard power rail support: 2.7 V to 3.6 V supply range aligns with common 3.0 V systems for straightforward power management.
• Compact TSOP footprint: 48-TFSOP (0.724", 18.40 mm width) package supports space-constrained layouts while maintaining accessibility for mass storage.
• Operating-temperature specification: 0 °C to 70 °C ambient rating provides predictable behavior in standard commercial environments.

Why Choose MT29F256G08CBCBBWP-10M:B TR?

The MT29F256G08CBCBBWP-10M:B TR positions itself as a high-density parallel NAND flash option offering 256 Gbit in a 48-TSOP I package. Its combination of MLC NAND technology, 32G × 8 organization, and parallel interface makes it suitable for designs that require substantial on-board non-volatile storage with a familiar parallel interface and standard 3.0 V class power rails.

This device is appropriate for engineers and procurement teams specifying large-capacity flash in systems operating within standard commercial temperature ranges, and for designs where a TSOP package and parallel connectivity are preferred for layout or legacy interface reasons.

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