MT29F256G08CBCBBWP-10ES:B TR

The MT29F256G08CBCBBWP-10ES:B TR is a 256 Gbit non-volatile NAND flash memory device using MLC NAND technology with a parallel memory interface. It is organized as 32G × 8 and is offered in a 48‑TSOP I package.

With a 100 MHz clock rating and a supply range of 2.7 V to 3.6 V, this device targets designs that require high-density parallel flash storage in a compact 48‑TFSOP footprint and operation within a 0°C to 70°C ambient temperature range.

Key Features

• Memory Type & Capacity  256 Gbit non-volatile NAND flash (MLC) providing high-density storage in a single device.
• Memory Organization  Organized as 32G × 8 to match parallel data bus architectures.
• Interface & Clock  Parallel memory interface with a clock frequency rating of 100 MHz for synchronized system integration.
• Supply Voltage  Operates from 2.7 V to 3.6 V to support common 3 V system rails.
• Package  Supplied in a 48‑TSOP I (48‑TFSOP, 18.40 mm width) package for board-level density and standard TSOP mounting.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C.

Typical Applications

• Embedded Storage  Provides high-density non-volatile storage for embedded systems that use parallel NAND flash for code or data retention.
• Firmware and Code Image Storage  Suitable for systems requiring on-board storage of firmware images arranged across an 8-bit parallel interface.
• Consumer and Industrial Electronics  Fits applications operating within a 0°C to 70°C ambient range where compact TSOP packaging and 3 V supply compatibility are required.

Unique Advantages

• High-density 256 Gbit capacity: Reduces the number of devices required for large storage needs by consolidating data into a single NAND component.
• MLC NAND technology: Balances density and cost by using multi-level cell architecture as specified.
• Parallel 8-bit organization (32G × 8): Eases integration into parallel memory buses and legacy parallel controllers.
• Wide supply voltage range: 2.7 V to 3.6 V operation supports common 3 V system rails for flexible power design.
• Compact 48‑TSOP I package: Provides a standardized, space-efficient footprint for PCB layout and assembly.
• Defined operating ambient: 0°C to 70°C rating enables deployment in typical consumer and commercial environments.

Why Choose MT29F256G08CBCBBWP-10ES:B TR?

The MT29F256G08CBCBBWP-10ES:B TR delivers a straightforward, high-density NAND flash option for designs that require parallel interface memory in a compact TSOP package. Its 256 Gbit MLC organization, 32G × 8 data arrangement, and 2.7 V to 3.6 V supply compatibility make it suitable for systems that need on-board non-volatile storage with defined ambient operating limits.

Choose this device when a single-chip, parallel-interface flash solution with a 48‑TSOP I footprint and a 100 MHz clock rating aligns with your board-level integration and power requirements.

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