MT29F256G08CBHBBJ4-3R:B TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 586 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CBHBBJ4-3R:B TR – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08CBHBBJ4-3R:B TR is a 256 Gbit non-volatile NAND flash memory organized as 32G × 8 and implemented in MLC FLASH technology. It provides parallel memory access with a documented clock frequency of 333 MHz and operates over a 2.5 V to 3.6 V supply range.
Packaged in a 132-VBGA (12×18) footprint and specified for commercial temperature operation (0°C to 70°C), this device is intended for designs requiring high-density, parallel-addressable non-volatile storage.
Key Features
- Technology & Memory Organization MLC NAND flash implemented as 32G × 8 organization, delivering a total of 256 Gbit of non-volatile storage.
- Memory Format Parallel FLASH memory format suitable for parallel-access storage architectures.
- Interface & Performance Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation.
- Voltage Range Flexible supply voltage from 2.5 V to 3.6 V to support a range of system power rails.
- Package 132-VBGA package in a 12×18 layout for compact board-level integration.
- Operating Temperature Commercial operating range of 0°C to 70°C (TA).
Typical Applications
- Consumer Electronics — High-density non-volatile storage for devices that require large on-board data or firmware storage within a commercial temperature envelope.
- Embedded Systems — Parallel FLASH memory for embedded controllers and processors that use parallel-access memory organization and require up to 256 Gbit capacity.
- Storage Modules — Component-level NAND storage for module designs where a 132-VBGA package and 2.5–3.6 V supply compatibility are required.
Unique Advantages
- High-density storage: 256 Gbit capacity (32G × 8) enables large on-board non-volatile storage without external expansion.
- Parallel interface with 333 MHz clock: Parallel access and specified clock frequency support synchronous memory designs that leverage parallel addressing.
- Wide supply voltage window: 2.5 V to 3.6 V operation provides compatibility with multiple system voltage rails.
- Compact VBGA package: 132-VBGA (12×18) package allows for space-efficient integration on populated PCBs.
- Commercial temperature rating: Specified for 0°C to 70°C operation for standard commercial applications.
- MLC NAND technology: Multi-level cell FLASH provides a balance of storage density for designs prioritizing capacity.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29F256G08CBHBBJ4-3R:B TR positions itself as a high-density, parallel-access MLC NAND flash device for commercial applications that require up to 256 Gbit of non-volatile storage. Its 333 MHz clock specification, parallel interface, and flexible 2.5–3.6 V supply range make it suitable for system designs that need large onboard memory within a compact 132-VBGA footprint.
This device is ideal for engineers and procurement teams targeting consumer and embedded system products where commercial temperature operation and a compact package are key considerations. The combination of memory organization, package size, and voltage flexibility supports straightforward integration into parallel-memory architectures.
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