MT29F256G08CBHBBJ4-3R:B
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 924 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CBHBBJ4-3R:B – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08CBHBBJ4-3R:B from Micron Technology Inc. is a 256 Gbit non-volatile FLASH memory device based on NAND MLC technology. It is organized as 32G × 8 and provided in a 132-VBGA (12×18) package.
The device uses a parallel memory interface, supports a clock frequency of 333 MHz, operates from 2.5 V to 3.6 V, and has an ambient operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Technology FLASH - NAND (MLC) non-volatile memory providing 256 Gbit capacity.
- Memory Organization Organized as 32G × 8 to present the device memory map for parallel operation.
- Interface Parallel memory interface for integration with parallel bus architectures.
- Clock Clock frequency specified at 333 MHz.
- Voltage Supply Operates over a 2.5 V to 3.6 V supply range.
- Package 132-VBGA package, 12×18 footprint.
- Operating Temperature Rated for 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 256 Gbit capacity in a single device (32G × 8) simplifies memory provisioning on the board.
- MLC NAND technology: Multi-level cell architecture increases bit density per device.
- Parallel interface with defined clock rate: Parallel interface combined with a 333 MHz clock frequency aligns with designs that reference a parallel memory timing specification.
- Flexible power range: 2.5 V to 3.6 V supply compatibility accommodates a range of system power rails.
- Compact VBGA packaging: 132-VBGA (12×18) package offers a compact physical footprint for high-density memory integration.
- Micron manufacturing: Supplied by Micron Technology Inc., identifying the device source and part traceability.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29F256G08CBHBBJ4-3R:B positions a high-capacity, parallel NAND MLC flash option in a compact 132-VBGA package for designs that specify 256 Gbit non-volatile storage, a 333 MHz clock frequency, and a 2.5 V–3.6 V operating range. Its explicit specifications make it suitable for engineering teams needing a defined parallel FLASH memory component with known package and thermal limits.
Choosing this part supports designs that require a single-device high-density memory solution with clear electrical and mechanical parameters as provided by Micron Technology Inc.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F256G08CBHBBJ4-3R:B.
