MT29F256G08CECABH6-6:A TR
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 605 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CECABH6-6:A TR – IC FLASH 256GBIT PAR 152VBGA
The MT29F256G08CECABH6-6:A TR is a 256 Gbit parallel NAND flash memory device built with MLC (multi-level cell) technology. It is organized as 32G × 8 and provides non-volatile storage in a compact 152‑VBGA (14×18) package.
This device is intended for designs that require high-density parallel NAND flash memory with a defined clock specification and standard commercial operating conditions, offering a single-package memory option with a 2.7 V–3.6 V supply range and a 0°C–70°C operating temperature window.
Key Features
- Memory Core Non-volatile FLASH - NAND (MLC) technology with a total capacity of 256 Gbit organized as 32G × 8.
- Interface Parallel memory interface for board-level integration.
- Clock Defined clock frequency of 166 MHz for device timing.
- Power Voltage supply range of 2.7 V to 3.6 V.
- Package 152‑VBGA (14×18) supplier device package for compact mounting.
- Operating Temperature Commercial temperature rating of 0°C–70°C (TA).
Typical Applications
- High-density parallel storage Systems requiring a single-package 256 Gbit parallel NAND flash for board-level memory capacity.
- Board-level non-volatile storage Designs that specify MLC NAND for persistent data storage.
- Commercial-temperature systems Equipment and assemblies that operate within the 0°C–70°C temperature range.
Unique Advantages
- High capacity in a single device: 256 Gbit (32G × 8) reduces the need for multiple memory components on the PCB.
- Parallel interface with defined timing: 166 MHz clock frequency provides a clear timing target for parallel memory designs.
- Broad 3 V supply compatibility: Operates from 2.7 V to 3.6 V to match common 3 V system rails.
- Compact VBGA footprint: 152‑VBGA (14×18) package supports dense board layouts and surface-mount assembly.
- Commercial temperature rating: Specified 0°C–70°C operation for standard commercial environments.
Why Choose MT29F256G08CECABH6-6:A TR?
The MT29F256G08CECABH6-6:A TR positions itself as a high-density parallel NAND flash option that combines 256 Gbit capacity, MLC technology, and a compact 152‑VBGA package. Its 32G × 8 organization, 166 MHz clock, and 2.7 V–3.6 V supply range make it suitable for designs that need consolidated, board-level non-volatile memory within commercial temperature limits.
Choosing this device can simplify memory integration by providing a large single-package storage option that aligns with common 3 V supply rails and standard commercial operating conditions, supporting scalable memory requirements across product development cycles.
Request a quote or contact sales to discuss availability, pricing, and to submit procurement inquiries for the MT29F256G08CECABH6-6:A TR.
