MT29F256G08CBCBBWP-10:B TR
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 364 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CBCBBWP-10:B TR – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CBCBBWP-10:B TR is a 256 Gbit non-volatile NAND flash memory device using MLC (multi-level cell) technology. It is organized as 32G × 8 and provided in a 48-TSOP I package (48-TFSOP, 0.724", 18.40 mm width).
This parallel-interface flash device operates from a 2.7 V to 3.6 V supply, supports a 100 MHz clock, and is specified for ambient operation from 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH – NAND (MLC) technology providing 256 Gbit storage capacity.
- Organization Memory organized as 32G × 8 to deliver the full 256 Gbit density.
- Interface & Frequency Parallel memory interface with a specified clock frequency of 100 MHz.
- Supply Voltage Operates from 2.7 V to 3.6 V.
- Package Supplied in a 48-TSOP I (48-TFSOP) package — 0.724" (18.40 mm) width.
- Operating Temperature Ambient operating temperature range of 0°C to 70°C (TA).
- Memory Format FLASH memory format suitable for non-volatile storage integration.
Typical Applications
- High-density parallel flash storage — For designs requiring a single-device 256 Gbit parallel NAND flash solution.
- Embedded system memory — Fits applications that accept a 48-TSOP I package and operate within 0°C–70°C ambient temperature.
- Firmware and data retention — Organized 32G × 8 MLC NAND for non-volatile firmware or data storage.
Unique Advantages
- Large 256 Gbit capacity: Provides substantial non-volatile storage in one device, reducing the need for multiple chips to achieve equivalent density.
- MLC NAND technology: Multi-level cell architecture enables higher density within the specified package footprint.
- Parallel interface with 100 MHz clock: Supports designs that utilize parallel flash memory signaling at the specified clock rate.
- Standard 48-TSOP I package: Delivered in a 48-TFSOP (0.724", 18.40 mm) package compatible with TSOP I footprints.
- Flexible supply range: Operates across 2.7 V to 3.6 V systems to accommodate common 3 V designs.
- Commercial temperature rating: Specified for 0°C to 70°C ambient operation for commercial-grade applications.
Why Choose MT29F256G08CBCBBWP-10:B TR?
The MT29F256G08CBCBBWP-10:B TR combines high-density 256 Gbit MLC NAND flash with a parallel interface and a standard 48-TSOP I package, offering a compact, single-device storage option for systems requiring large non-volatile memory. Its 2.7 V–3.6 V supply range and 0°C–70°C operating ambient rating make it suitable for commercial designs that specify these electrical and environmental parameters.
Manufactured by Micron Technology Inc., this device is intended for designers targeting high-capacity flash implementations where package form factor, voltage compatibility, and specified clocking are key selection criteria.
Request a quote or submit a pricing inquiry to receive availability and ordering information for the MT29F256G08CBCBBWP-10:B TR.
