MT29F256G08CBCBBJ4-5M:B
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 34 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CBCBBJ4-5M:B – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08CBCBBJ4-5M:B is a 256 Gbit non-volatile NAND flash memory device using MLC technology. It is organized as 32G × 8 and implements a parallel memory interface with a 200 MHz clock specification.
Packaged in a 132‑VBGA (12 × 18) footprint and supporting a supply range of 2.7 V to 3.6 V, this device is intended for designs that require high-density parallel flash storage within the stated operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Type & Architecture Non-volatile NAND flash (MLC) organized as 32G × 8 for a total capacity of 256 Gbit.
- Interface & Timing Parallel memory interface with a specified clock frequency of 200 MHz to support parallel access timing requirements.
- Power Supply Wide operating voltage range from 2.7 V to 3.6 V for compatibility with common 3 V system rails.
- Package 132‑VBGA package (12 × 18) providing a compact BGA footprint for surface-mount assembly.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
- Memory Format FLASH memory format suitable for non-volatile data storage applications.
Typical Applications
- High-density storage applications — Where a 256 Gbit non-volatile flash device is required for bulk data or firmware storage.
- Parallel flash memory designs — Systems that use a parallel memory interface and require a device with a 200 MHz clock specification.
- Space-constrained board layouts — Designs that benefit from the 132‑VBGA (12 × 18) package footprint for surface-mount integration.
Unique Advantages
- Large raw capacity: 256 Gbit density enables reduced BOM count by consolidating storage into a single device.
- Parallel interface with defined clock: 200 MHz clock support provides a clear timing parameter for system integration and memory controller design.
- Standard 3 V supply range: 2.7 V to 3.6 V operation aligns with common system power rails to simplify power design.
- Compact BGA package: 132‑VBGA (12 × 18) offers a small surface-mount footprint for space-efficient PCB layouts.
- MLC NAND technology: Multi-level cell architecture provides high bit density per device for storage-intensive applications.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29F256G08CBCBBJ4-5M:B combines high-density 256 Gbit MLC NAND flash with a parallel interface and a defined 200 MHz clock, presented in a 132‑VBGA (12 × 18) package and operating at 2.7 V to 3.6 V. Its specified ambient range of 0°C to 70°C makes its operating conditions explicit for system-level planning.
This device is suited to designs that need consolidated, high-capacity parallel flash storage in a compact BGA form factor, providing clear electrical and mechanical parameters for integration and long-term design stability.
Request a quote or submit an inquiry for MT29F256G08CBCBBJ4-5M:B to receive pricing and availability information for your project needs.
