MT29F256G08AUCABH3-10IT:A TR
| Part Description |
IC FLASH 256GBIT PAR 100LBGA |
|---|---|
| Quantity | 378 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-LBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08AUCABH3-10IT:A TR – IC FLASH 256GBIT PAR 100LBGA
The MT29F256G08AUCABH3-10IT:A TR is a non-volatile NAND flash memory device implementing SLC (Single-Level Cell) technology with a 256 Gbit density. It is organized as 32G × 8 and provides a parallel memory interface for systems that require on-board flash storage.
Built in a 100-LBGA (12×18) package and specified for operation from -40°C to 85°C, this device targets designs requiring high-capacity parallel flash with a 100 MHz clock domain and a 2.7 V–3.6 V supply range.
Key Features
- Memory Type & Technology Non-volatile NAND flash using SLC technology for single-bit-per-cell storage.
- Capacity & Organization 256 Gbit capacity organized as 32G × 8, providing high-density on-board storage.
- Interface & Clock Parallel memory interface with a 100 MHz clock frequency for synchronous system integration.
- Voltage Supply Operates from 2.7 V to 3.6 V, matching common flash supply rails.
- Package 100-LBGA package (12×18 mm) suitable for space-constrained board layouts.
- Operating Temperature Specified ambient temperature range: -40°C to 85°C (TA).
Unique Advantages
- High-density storage: 256 Gbit capacity in a 32G × 8 organization enables substantial non-volatile data retention on a single device.
- Parallel interface with 100 MHz clock: Supports integration into existing parallel-memory architectures that operate at up to 100 MHz.
- Flexible supply range: 2.7 V–3.6 V operation accommodates common system power rails.
- Compact LBGA footprint: 100-LBGA (12×18) package reduces board area for high-density designs.
- Extended temperature capability: Rated for -40°C to 85°C ambient, enabling use across a wide range of operating environments.
Why Choose MT29F256G08AUCABH3-10IT:A TR?
Manufactured by Micron Technology Inc., the MT29F256G08AUCABH3-10IT:A TR combines high-density SLC NAND flash with a parallel interface, compact 100-LBGA packaging, and a broad supply and temperature operating window. This makes it suitable for designs that require large non-volatile storage in a parallel memory architecture.
The device’s specification set—256 Gbit capacity, 32G × 8 organization, 100 MHz clocking, 2.7 V–3.6 V supply, and -40°C to 85°C operating range—provides a clear, verifiable basis for selection in systems where those exact electrical and mechanical characteristics are required.
Request a quote or contact sales to discuss availability, lead times and pricing for the MT29F256G08AUCABH3-10IT:A TR.
