MT29F256G08CECEBJ4-37ITR:E

The MT29F256G08CECEBJ4-37ITR:E is a 256 Gbit non-volatile NAND flash memory device from Micron Technology Inc. Implemented as multi-level cell (MLC) NAND in a parallel interface, it provides high-density parallel flash storage in a compact VBGA package.

This device targets designs that require 256 Gbit parallel NAND flash memory with a 32G x 8 organization, offering a 267 MHz clock frequency and single-supply operation across a 2.7 V to 3.6 V range.

Key Features

• Memory Type and Technology Non-volatile NAND flash using MLC technology for high-density data storage.
• Capacity and Organization 256 Gbit capacity with a 32G × 8 memory organization, enabling large on-board storage in a single device.
• Interface and Performance Parallel memory interface with a specified clock frequency of 267 MHz for synchronous operation.
• Voltage Supply Single-supply operation from 2.7 V to 3.6 V, suitable for systems within this supply range.
• Package 132-VBGA package (12 × 18 mm) providing a compact footprint for board-level integration.
• Operating Temperature Specified operating temperature range of −40°C to 85°C (TA), suitable for a broad range of temperature environments.
• Manufacturer Supplied by Micron Technology Inc., a known manufacturer of memory devices.

Typical Applications

• Embedded Systems Provides high-density parallel NAND storage for embedded designs that require 256 Gbit non-volatile memory.
• Consumer Electronics Can be used where a compact, high-capacity flash solution with a 132-VBGA package is needed.
• Industrial Equipment Suited to equipment operating across −40°C to 85°C that require parallel NAND flash with a 2.7 V–3.6 V supply.
• Storage Controller Integration Acts as a high-capacity parallel NAND memory option for controller-based storage implementations.

Unique Advantages

• High Density 256 Gbit Capacity: Delivers large on-board non-volatile storage in a single package, enabling reduced BOM for high-capacity designs.
• Parallel Interface with 267 MHz Clock: Supports synchronous parallel operation at 267 MHz, facilitating predictable timing integration with parallel memory controllers.
• Wide Supply Voltage Range: Operates from 2.7 V to 3.6 V, allowing compatibility with common system power rails.
• Compact VBGA Package: 132-VBGA (12 × 18 mm) package provides a space-efficient form factor for board-level assembly.
• Extended Temperature Range: Rated for −40°C to 85°C, suitable for designs requiring broad ambient temperature operation.

Why Choose MT29F256G08CECEBJ4-37ITR:E?

The MT29F256G08CECEBJ4-37ITR:E combines a 256 Gbit MLC NAND architecture with a parallel interface and a compact 132-VBGA package, making it a straightforward option for designs that need high-density non-volatile storage in a small footprint. Its 32G × 8 organization, 267 MHz clocking, and 2.7 V–3.6 V supply support clear integration parameters for system designers.

This Micron NAND flash device is appropriate for engineers specifying parallel flash memory for embedded, consumer, or industrial applications that operate within the listed temperature and supply ranges and require a single-device 256 Gbit solution.

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