MT29F256G08CECCBH6-6R:C TR
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 541 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CECCBH6-6R:C TR – IC FLASH 256GBIT PAR 152VBGA
The MT29F256G08CECCBH6-6R:C TR is a 256 Gbit non-volatile NAND flash memory device implemented as MLC (multi-level cell) technology with a parallel memory interface. It is organized as 32G × 8 and delivers system clock operation at 167 MHz.
Designed for applications requiring high-density parallel flash storage, the device offers a compact 152-VBGA (14×18) package and supports a supply voltage range of 2.7 V to 3.6 V with an operating ambient temperature range of 0 °C to 70 °C.
Key Features
- Memory Type & Technology Non-volatile NAND flash using MLC technology for high-density data storage.
- Density & Organization 256 Gbit total capacity organized as 32G × 8 to simplify system addressing and memory mapping.
- Interface & Performance Parallel memory interface with a clock frequency specified at 167 MHz for synchronous operation.
- Power Wide supply voltage range from 2.7 V to 3.6 V to accommodate common system power rails.
- Package Available in a 152‑VBGA (14×18) supplier device package for compact board-level integration.
- Environmental Range Commercial operating ambient temperature specified from 0 °C to 70 °C.
Typical Applications
- Embedded storage subsystems Use as high-density non-volatile storage where a parallel NAND interface and 256 Gbit capacity are required.
- Board-level memory expansion Integrates into systems needing additional non-volatile memory in a compact 152‑VBGA package.
- General-purpose data retention Suitable for designs that require retention of large data sets with a 2.7 V–3.6 V supply range.
Unique Advantages
- High density in a compact package: 256 Gbit capacity in a 152‑VBGA (14×18) footprint reduces board area for large storage needs.
- Parallel interface flexibility: Parallel memory interface simplifies migration or integration into systems designed for parallel NAND.
- MLC NAND technology: Multi-level cell implementation provides increased bit density per die for higher total capacity.
- Wide supply compatibility: Operates across 2.7 V–3.6 V rails to fit common system power architectures.
- Specified operating range: Commercial temperature rating of 0 °C to 70 °C for standard ambient operating environments.
Why Choose MT29F256G08CECCBH6-6R:C TR?
The MT29F256G08CECCBH6-6R:C TR positions itself as a high-density parallel NAND flash option that balances capacity, compact packaging, and straightforward system-level integration. Its 256 Gbit MLC architecture and 32G × 8 organization make it suitable for designs that require large non-volatile storage in a VBGA footprint.
This device is well suited to engineers and procurement teams looking for a parallel-interface flash memory with defined electrical and environmental specifications (2.7 V–3.6 V supply, 0 °C–70 °C operating ambient) for reliable incorporation into commercial electronic products.
Request a quote or contact sales to discuss availability, pricing, and suitability of the MT29F256G08CECCBH6-6R:C TR for your design needs.
