MT29F256G08CEEABH6-12IT:A TR

IC FLASH 256GBIT PAR 152VBGA
Part Description

IC FLASH 256GBIT PAR 152VBGA

Quantity 650 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package152-VBGA (14x18)Memory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeIndustrial
Clock Frequency83 MHzVoltage2.5V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging152-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT29F256G08CEEABH6-12IT:A TR – IC FLASH 256GBIT PAR 152VBGA

The MT29F256G08CEEABH6-12IT:A TR is a 256 Gbit parallel NAND flash memory device using MLC technology. It provides a high-density, parallel flash memory organization (32G × 8) in a compact 152-VBGA (14 × 18 mm) package.

Designed for systems that require non-volatile parallel flash storage, the device supports an 83 MHz clock, a 2.5 V to 3.6 V supply range and an operating temperature range of −40 °C to 85 °C, offering a combination of capacity, interface compatibility, and broad operating conditions for embedded designs.

Key Features

  • Memory Core 256 Gbit NAND flash using MLC technology with a memory organization of 32G × 8 for high-density storage.
  • Interface Parallel memory interface suitable for designs that require byte-wide parallel access.
  • Clock Supports an 83 MHz clock frequency to match system timing requirements.
  • Voltage Wide supply voltage range from 2.5 V to 3.6 V for flexibility across system power rails.
  • Package & Mounting 152-VBGA (14 × 18 mm) package providing a compact footprint for high-density board layouts.
  • Environmental Operating temperature specified from −40 °C to 85 °C (TA), enabling use across a broad thermal range.

Typical Applications

  • Embedded Storage — Non-volatile parallel NAND flash for embedded systems that need large local storage capacity.
  • Industrial Systems — Suitable for industrial devices requiring wide operating temperature support and robust supply range.
  • Networking and Infrastructure — Use where parallel flash arrays provide local code or data storage in communications equipment.

Unique Advantages

  • High Density in a Compact Package: 256 Gbit capacity in a 152-VBGA (14 × 18 mm) package reduces board area for large storage requirements.
  • Parallel Interface Integration: Byte-wide parallel organization (32G × 8) simplifies integration into systems designed for parallel flash access.
  • Flexible Power Compatibility: 2.5 V to 3.6 V supply range supports a variety of system power architectures.
  • Broad Operating Temperature: −40 °C to 85 °C rating supports deployment across a wide range of ambient conditions.
  • Predictable Timing: 83 MHz clock support aligns with system timing requirements for synchronous parallel operation.

Why Choose IC FLASH 256GBIT PAR 152VBGA?

The MT29F256G08CEEABH6-12IT:A TR positions itself as a high-density parallel MLC NAND flash component that balances large capacity, compact package size, and broad electrical and thermal operating ranges. Its 32G × 8 organization and 83 MHz clock make it suitable for systems that require byte-wide parallel flash memory with predictable timing.

This device is appropriate for designers and procurement teams specifying non-volatile parallel flash for embedded, industrial, or networking applications where capacity, a 152-VBGA footprint (14 × 18 mm), and tolerance to a wide supply and temperature range are central to long-term design robustness.

Request a quote or contact sales to discuss pricing, availability, and lead times for the MT29F256G08CEEABH6-12IT:A TR.

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