MT29F256G08CEECBH6-12:C
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 1,016 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CEECBH6-12:C – IC FLASH 256GBIT PAR 152VBGA
The MT29F256G08CEECBH6-12:C is a 256 Gbit non-volatile NAND flash memory device using MLC technology, organized as 32G × 8 with a parallel memory interface. It is supplied in a 152‑VBGA (14 × 18) package and is manufactured by Micron Technology Inc.
Key electrical and operational parameters include a supply voltage range of 2.5 V to 3.6 V, an 83 MHz clock frequency, and an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Core Non-volatile FLASH NAND (MLC) technology with a total memory size of 256 Gbit organized as 32G × 8.
- Interface Parallel memory interface for direct parallel bus connections.
- Clock 83 MHz clock frequency for synchronous operation where applicable.
- Power Wide supply voltage range from 2.5 V to 3.6 V to support varied system power domains.
- Package 152‑VBGA (14 × 18) supplier device package for compact BGA mounting.
- Operating Range Ambient operating temperature range of 0°C to 70°C (TA).
Unique Advantages
- High storage density: 256 Gbit capacity provides substantial non-volatile storage in a single device, reducing the need for multiple components.
- Parallel interface compatibility: Parallel memory interface enables integration into designs using parallel NAND architectures.
- Flexible power range: 2.5 V to 3.6 V supply allows operation across common system voltage rails.
- Compact BGA footprint: 152‑VBGA (14 × 18) package supports space-constrained board designs while providing BGA mounting benefits.
- Known organization: 32G × 8 memory organization simplifies capacity planning and memory map design.
Why Choose IC FLASH 256GBIT PAR 152VBGA?
The MT29F256G08CEECBH6-12:C delivers high-density, parallel NAND flash storage in a compact 152‑VBGA package, combining a 256 Gbit MLC core with a 32G × 8 organization. Its electrical profile—2.5 V to 3.6 V supply and 83 MHz clock—along with a 0°C to 70°C operating range makes it appropriate for systems that require substantial non-volatile memory capacity in a BGA form factor.
As a Micron Technology Inc. device, this part is suited to designs that prioritize single-device memory capacity and a parallel interface, providing clear design parameters for integration and scalability within those system constraints.
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