MT29F256G08CJAAAWP-IT:A TR

The MT29F256G08CJAAAWP-IT:A TR is a 256 Gbit non-volatile NAND flash memory device based on MLC technology with a parallel interface and 32G × 8 memory organization. Packaged in a 48-TSOP I form factor and supporting a 2.7 V to 3.6 V supply, it is intended for designs that require high-density parallel flash storage with extended ambient temperature operation.

Key Features

• Memory Type & Technology 256 Gbit FLASH – NAND (MLC) non-volatile memory providing high-density storage in a NAND architecture.
• Memory Organization Organized as 32G × 8 for byte-wide parallel access and predictable device addressing.
• Interface Parallel memory interface for integration into systems expecting parallel FLASH connectivity.
• Voltage Supply Operates from 2.7 V to 3.6 V, enabling use in 3.3 V nominal systems.
• Package Supplied in a 48-TSOP I package (48-TFSOP, 0.724" / 18.40 mm width) for PCB implementations requiring a TSOP footprint.
• Temperature Range Rated for operation from −40°C to 85°C (TA), suitable for applications with extended ambient temperature requirements.

Typical Applications

• Embedded systems requiring high-density storage Provides 256 Gbit of non-volatile NAND storage for systems that require large local data or code storage via a parallel interface.
• Industrial equipment with extended temperature needs The −40°C to 85°C operating range supports deployment in equipment exposed to wide ambient temperatures.
• Board-level parallel memory designs The 48-TSOP I package and byte-wide 32G × 8 organization allow integration into PCB designs using parallel flash memory topologies.

Unique Advantages

• High storage density: 256 Gbit capacity delivers substantial non-volatile storage in a single device, reducing the need for multiple parts.
• Byte-wide organization: 32G × 8 layout supports straightforward parallel byte access for legacy and parallel-memory architectures.
• Wide supply range: 2.7 V to 3.6 V operation allows compatibility with common 3.3 V system rails.
• Compact TSOP footprint: 48-TSOP I packaging (18.40 mm width) eases placement on space-constrained PCBs while maintaining accessibility for parallel connections.
• Extended ambient operation: −40°C to 85°C rating provides resilience in environments with temperature extremes.

Why Choose MT29F256G08CJAAAWP-IT:A TR?

This Micron NAND flash device combines high-density 256 Gbit storage with a parallel byte-wide organization and a TSOP package form factor, making it suitable for designs that require substantial non-volatile memory in a compact footprint. Its 2.7 V–3.6 V supply range and −40°C to 85°C operating specification address common system voltage and temperature constraints.

Choose this device for projects that need a straightforward parallel NAND solution with clear integration characteristics—density, package, voltage, and temperature—defined for rapid evaluation and system incorporation.

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