MT29F256G08CJAAAWP-Z:A TR
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,435 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJAAAWP-Z:A TR – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJAAAWP-Z:A TR is a 256 Gbit non-volatile FLASH memory device based on NAND (MLC) technology. It is organized as 32G × 8 and provides a parallel memory interface in a 48-TSOP I package.
This device targets designs that require high-density parallel NAND flash storage with a supply voltage range of 2.7 V to 3.6 V and an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH using NAND (MLC) technology for high-density storage.
- Capacity & Organization 256 Gbit total capacity, organized as 32G × 8.
- Interface Parallel memory interface for byte-wide system integration.
- Voltage Supply Operates from 2.7 V to 3.6 V.
- Package 48-TFSOP / 48-TSOP I package with a width of 0.724" (18.40 mm).
- Operating Temperature Ambient operating range 0°C to 70°C (TA).
- Memory Format & Mounting FLASH memory format; MountingType specified as Non-Volatile.
Typical Applications
- High-density storage systems — Systems requiring a single-device 256 Gbit parallel NAND FLASH solution.
- Embedded firmware and code storage — Use where 32G × 8 organization and a parallel interface match system memory maps.
- Commercial and industrial electronics — Devices operating within the specified 0°C to 70°C ambient temperature range.
Unique Advantages
- Large on-board capacity: 256 Gbit provides substantial non-volatile storage in a single device footprint.
- Parallel interface for straightforward integration: Byte-wide parallel access supports designs that map NAND as parallel memory.
- Compact, standard package: 48-TSOP I (0.724", 18.40 mm) package aligns with standard board-level footprints.
- Flexible power range: 2.7 V–3.6 V operation fits common 3 V system rails.
- MLC NAND technology: Enables higher storage density within a compact form factor.
Why Choose IC FLASH 256GBIT PAR 48TSOP I?
The MT29F256G08CJAAAWP-Z:A TR positions itself as a high-density, parallel-interface NAND FLASH device suitable for designs that require 256 Gbit of non-volatile storage in a 48-TSOP I package. Its 32G × 8 organization, 2.7 V–3.6 V supply range, and 0°C–70°C operating window provide clear, verifiable specifications for system integration.
This device is appropriate for engineers and procurement teams specifying compact, high-capacity parallel FLASH components for embedded storage and code/firmware retention where the provided electrical, thermal, and package characteristics align with system requirements.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F256G08CJAAAWP-Z:A TR.
