MT29F256G08CJAAAWP:A TR

IC FLASH 256GBIT PAR 48TSOP I
Part Description

IC FLASH 256GBIT PAR 48TSOP I

Quantity 496 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CJAAAWP:A TR – IC FLASH 256GBIT PAR 48TSOP I

The MT29F256G08CJAAAWP:A TR is a 256 Gbit non-volatile NAND flash memory device built on FLASH - NAND (MLC) technology and organized as 32G × 8. It provides high-density parallel flash storage in a 48-TFSOP (48-TSOP I) package for systems operating from 2.7 V to 3.6 V.

This device targets applications that require large-capacity non-volatile storage with a parallel memory interface and is specified for an ambient operating temperature range of 0°C to 70°C.

Key Features

  • Memory Type Non-volatile FLASH memory implemented as NAND (MLC) for multi-level cell storage.
  • Capacity & Organization 256 Gbit total capacity, organized as 32G × 8 to support wide data paths in parallel systems.
  • Interface Parallel memory interface suitable for designs requiring parallel flash access.
  • Voltage Supply Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system rails.
  • Package 48-TFSOP (48-TSOP I) package with an 18.40 mm width (0.724") for surface-mount applications.
  • Operating Temperature Rated for ambient temperatures from 0°C to 70°C (TA), suitable for commercial-temperature designs.

Typical Applications

  • Firmware and Boot Storage Large non-volatile capacity supports storage of firmware and boot code where parallel flash access is required.
  • Mass Non-Volatile Storage High-density 256 Gbit organization for systems that require substantial on-board data storage.
  • Data Logging Suitable for applications that accumulate large datasets in non-volatile memory within the specified temperature and voltage ranges.

Unique Advantages

  • High-density Capacity: 256 Gbit total provides extensive non-volatile storage in a single device, reducing the need for multiple memory components.
  • Parallel Interface Integration: 32G × 8 organization and parallel interface simplify integration with parallel-memory systems and controllers.
  • Standard Supply Voltage: 2.7 V to 3.6 V operation aligns with common 3.3 V system rails for ease of power design.
  • Compact Package: 48-TFSOP (48-TSOP I) surface-mount package provides a compact footprint for board-level integration.
  • Commercial Temperature Rating: 0°C to 70°C operating range matches many commercial electronics requirements.

Why Choose IC FLASH 256GBIT PAR 48TSOP I?

The MT29F256G08CJAAAWP:A TR delivers large-capacity NAND (MLC) flash in a standard 48-TSOP package, offering a straightforward solution for designers needing high-density, parallel non-volatile memory. Its 32G × 8 organization and 2.7 V–3.6 V supply range make it suitable for systems that require extensive on-board storage while maintaining compatibility with common power rails.

This device is appropriate for design teams focused on scalable non-volatile storage in commercial-temperature environments, providing a single-device option to simplify BOM and board layout for high-capacity flash requirements.

Request a quote or submit an inquiry to get pricing and availability information for the MT29F256G08CJAAAWP:A TR and to discuss how it fits your design requirements.

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