MT29F256G08CJAAAWP:A TR
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 496 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJAAAWP:A TR – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJAAAWP:A TR is a 256 Gbit non-volatile NAND flash memory device built on FLASH - NAND (MLC) technology and organized as 32G × 8. It provides high-density parallel flash storage in a 48-TFSOP (48-TSOP I) package for systems operating from 2.7 V to 3.6 V.
This device targets applications that require large-capacity non-volatile storage with a parallel memory interface and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile FLASH memory implemented as NAND (MLC) for multi-level cell storage.
- Capacity & Organization 256 Gbit total capacity, organized as 32G × 8 to support wide data paths in parallel systems.
- Interface Parallel memory interface suitable for designs requiring parallel flash access.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system rails.
- Package 48-TFSOP (48-TSOP I) package with an 18.40 mm width (0.724") for surface-mount applications.
- Operating Temperature Rated for ambient temperatures from 0°C to 70°C (TA), suitable for commercial-temperature designs.
Typical Applications
- Firmware and Boot Storage Large non-volatile capacity supports storage of firmware and boot code where parallel flash access is required.
- Mass Non-Volatile Storage High-density 256 Gbit organization for systems that require substantial on-board data storage.
- Data Logging Suitable for applications that accumulate large datasets in non-volatile memory within the specified temperature and voltage ranges.
Unique Advantages
- High-density Capacity: 256 Gbit total provides extensive non-volatile storage in a single device, reducing the need for multiple memory components.
- Parallel Interface Integration: 32G × 8 organization and parallel interface simplify integration with parallel-memory systems and controllers.
- Standard Supply Voltage: 2.7 V to 3.6 V operation aligns with common 3.3 V system rails for ease of power design.
- Compact Package: 48-TFSOP (48-TSOP I) surface-mount package provides a compact footprint for board-level integration.
- Commercial Temperature Rating: 0°C to 70°C operating range matches many commercial electronics requirements.
Why Choose IC FLASH 256GBIT PAR 48TSOP I?
The MT29F256G08CJAAAWP:A TR delivers large-capacity NAND (MLC) flash in a standard 48-TSOP package, offering a straightforward solution for designers needing high-density, parallel non-volatile memory. Its 32G × 8 organization and 2.7 V–3.6 V supply range make it suitable for systems that require extensive on-board storage while maintaining compatibility with common power rails.
This device is appropriate for design teams focused on scalable non-volatile storage in commercial-temperature environments, providing a single-device option to simplify BOM and board layout for high-capacity flash requirements.
Request a quote or submit an inquiry to get pricing and availability information for the MT29F256G08CJAAAWP:A TR and to discuss how it fits your design requirements.