MT29F256G08CJAABWP-12:A
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,772 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJAABWP-12:A – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJAABWP-12:A is a 256 Gbit non-volatile FLASH memory device using NAND (MLC) technology with a parallel memory interface. It is organized as 32G × 8 and supplied in a 48-TSOP I (48-TFSOP, 0.724", 18.40mm width) package.
Designed for systems that require high-density parallel NAND storage, the device supports an 83 MHz clock frequency and operates from a 2.7 V to 3.6 V supply over a 0°C to 70°C ambient temperature range, offering straightforward integration into designs that use parallel FLASH memory.
Key Features
- Memory Core 256 Gbit capacity using NAND FLASH (MLC) technology, organized as 32G × 8 for dense non-volatile storage.
- Interface & Timing Parallel memory interface with an 83 MHz clock frequency to match parallel bus architectures.
- Power Operates from a 2.7 V to 3.6 V supply range suitable for common system power rails.
- Package Supplied in a 48-TSOP I package (48-TFSOP, 0.724" / 18.40 mm width) for PCB layouts that require a standard TSOP footprint.
- Operating Temperature Specified for ambient operation from 0°C to 70°C (TA) for commercial temperature-range applications.
- Memory Format & Mounting Non-volatile FLASH memory in a through-board mountable TSOP package.
Typical Applications
- Embedded Storage Provides 256 Gbit of parallel NAND FLASH for systems that require high-density non-volatile code or data storage.
- Consumer Electronics The 48-TSOP I package and 2.7 V–3.6 V supply range enable integration into compact consumer devices using parallel memory buses.
- Industrial & Commercial Systems Specified for 0°C to 70°C operation, suitable for commercial-grade applications requiring reliable non-volatile memory.
Unique Advantages
- High-density Storage: 256 Gbit capacity delivers significant non-volatile storage in a single device, reducing PCB real estate compared to multiple lower-density devices.
- Parallel Interface Compatibility: Parallel memory organization and an 83 MHz clock frequency ease integration into existing parallel bus architectures.
- Standard TSOP Package: 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm) footprint supports common board designs and assembly processes.
- Flexible Supply Voltage: 2.7 V to 3.6 V operation accommodates typical system power rails for straightforward power management.
- Commercial Temperature Support: Rated for 0°C to 70°C ambient operation for a wide range of commercial applications.
- MLC NAND Technology: Multi-level cell (MLC) FLASH provides increased density while maintaining standard FLASH memory behavior.
Why Choose IC FLASH 256GBIT PAR 48TSOP I?
This MT29F256G08CJAABWP-12:A device is positioned for designs that require high-density, parallel NAND FLASH in a standard 48-TSOP I package. With a 256 Gbit capacity, 32G × 8 organization, and MLC NAND technology, it offers a compact storage solution compatible with parallel bus systems operating within a 2.7 V–3.6 V supply range.
Its commercial temperature rating and standard package footprint make it suitable for a variety of electronic systems where integration simplicity and storage density are primary requirements.
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