MT29F256G08CJAABWP-12Z:A

IC FLASH 256GBIT PAR 48TSOP I
Part Description

IC FLASH 256GBIT PAR 48TSOP I

Quantity 572 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CJAABWP-12Z:A – 256 Gbit Parallel NAND Flash (48‑TSOP I)

The MT29F256G08CJAABWP-12Z:A is a 256 Gbit non-volatile flash memory device based on NAND MLC technology. It is organized as 32G × 8 and provides parallel flash storage in a 48‑TSOP I package.

Designed for systems that require parallel NAND flash storage, this device combines high density, a defined clock interface, and a standard TSOP form factor to support board-level integration in commercial temperature environments.

Key Features

  • Memory Architecture  256 Gbit capacity organized as 32G × 8, implemented with NAND MLC flash memory.
  • Interface & Clock  Parallel memory interface with a specified clock frequency of 83 MHz for synchronous operation with parallel host controllers.
  • Voltage Supply  Operates across a 2.7 V to 3.6 V supply range, suitable for 3 V systems.
  • Package & Mounting  Supplied in a 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width) for board-level mounting and PCB footprint compatibility.
  • Memory Format  FLASH (NAND) non-volatile memory format.
  • Operating Temperature  Commercial ambient operating range of 0 °C to 70 °C.

Typical Applications

  • Embedded Storage  Parallel NAND flash capacity for embedded systems requiring on-board non-volatile memory up to 256 Gbit.
  • Firmware and Data Storage  Use in designs that require solid-state storage in a parallel interface format and a standard TSOP package.
  • Legacy Parallel Interface Designs  For systems that integrate parallel memory devices and rely on an 83 MHz clock specification.

Unique Advantages

  • High-density non-volatile capacity: 256 Gbit (32G × 8) enables substantial on-board storage without external modules.
  • Parallel interface fit: Parallel memory interface and defined 83 MHz clock make the device suitable for designs using parallel NAND interfaces.
  • Wide supply tolerance: 2.7 V to 3.6 V operation supports common 3 V system rails.
  • Standard TSOP I packaging: 48‑TSOP I (48‑TFSOP) package simplifies PCB integration in board-level applications.
  • Commercial temperature rating: 0 °C to 70 °C operation for standard commercial deployments.

Why Choose MT29F256G08CJAABWP-12Z:A?

Manufactured by Micron Technology Inc., the MT29F256G08CJAABWP-12Z:A provides a combination of high-density MLC NAND flash, a parallel interface with an 83 MHz clock specification, and a standard 48‑TSOP I package. These characteristics make it suitable for designers seeking a straightforward, board-mounted parallel flash solution within a commercial temperature range.

The device is well suited to projects that require sizable non-volatile storage while maintaining compatibility with parallel memory architectures and 3 V supply environments, offering a clear path for integration into existing parallel-memory designs.

Request a quote or submit an inquiry for MT29F256G08CJAABWP-12Z:A to confirm availability and pricing for your design requirements.

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