MT29F256G08CJAABWP-12:A TR

IC FLASH 256GBIT PAR 48TSOP I
Part Description

IC FLASH 256GBIT PAR 48TSOP I

Quantity 590 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CJAABWP-12:A TR – IC FLASH 256GBIT PAR 48TSOP I

The MT29F256G08CJAABWP-12:A TR is a 256 Gbit non-volatile NAND flash memory device using MLC architecture and organized as 32G x 8. It provides parallel memory access in a 48-TSOP I package for systems that require high-density flash storage with a standard TSOP footprint.

This device targets applications that need parallel NAND flash storage with a 2.7 V to 3.6 V supply range and an operating ambient temperature range of 0°C to 70°C, offering a compact hardware footprint and defined electrical/interface characteristics.

Key Features

  • Memory Core 256 Gbit capacity implemented as 32G x 8 using FLASH - NAND (MLC) technology for non-volatile data storage.
  • Interface & Performance Parallel memory interface with specified clock frequency of 83 MHz for synchronous parallel operation.
  • Voltage Supply Operates from 2.7 V to 3.6 V, supporting common 3.3 V system power rails.
  • Package 48-TFSOP / 48-TSOP I package (0.724" / 18.40 mm width) for board-level footprint compatibility with TSOP designs.
  • Operating Range Commercial temperature rating with an ambient operating range of 0°C to 70°C.
  • Memory Organization & Format Organized as 32G x 8 and presented as FLASH memory format suitable for parallel NAND implementations.

Typical Applications

  • Embedded systems — Provides non-volatile parallel flash storage where a TSOP package and 256 Gbit capacity are required.
  • Firmware and code storage — Stores boot code and firmware images in systems that use parallel NAND flash memory.
  • High-density data storage — Fits designs that need large flash capacity in a standardized 48-TSOP I package footprint.

Unique Advantages

  • High storage density: 256 Gbit capacity enables large on-board non-volatile storage in a single-device solution.
  • Standard TSOP packaging: 48-TSOP I package supports board designs that require a compact, industry-standard footprint.
  • Parallel interface compatibility: Parallel NAND interface and 83 MHz clock support legacy and parallel-memory-based system architectures.
  • Flexible supply range: 2.7 V to 3.6 V operation accommodates common 3.3 V system rails without additional voltage translation.
  • Commercial temperature support: Rated for 0°C to 70°C operation for typical commercial and consumer environments.

Why Choose MT29F256G08CJAABWP-12:A TR?

The MT29F256G08CJAABWP-12:A TR combines MLC NAND flash technology with a 256 Gbit capacity and a parallel interface in a 48-TSOP I package, providing a compact, high-density non-volatile memory option for designs that rely on parallel NAND. Its defined voltage range and commercial temperature rating make it suitable for systems that require a straightforward integration of large flash capacity.

Manufactured by Micron Technology Inc., this device is appropriate for designers and procurement teams specifying parallel NAND flash in standardized TSOP packaging where capacity, interface type, and supply voltage compatibility are primary selection criteria.

If you need pricing, availability, or a formal quote for MT29F256G08CJAABWP-12:A TR, request a quote or contact sales to discuss your project requirements and lead times.

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