MT29F256G08CJAAAWP-ITZ:A TR

IC FLASH 256GBIT PAR 48TSOP I
Part Description

IC FLASH 256GBIT PAR 48TSOP I

Quantity 1,691 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CJAAAWP-ITZ:A TR – IC FLASH 256GBIT PAR 48TSOP I

The MT29F256G08CJAAAWP-ITZ:A TR is a 256 Gbit non-volatile NAND flash memory device using MLC technology with a parallel interface and a 32G x 8 organization. It is supplied in a 48-TSOP I package and operates from a 2.7 V to 3.6 V supply.

This device targets designs that require high-density parallel NAND storage with specified ambient tolerance down to -40°C and up to 85°C, presented in a standard 48-TFSOP footprint for board-level integration.

Key Features

  • Memory Capacity 256 Gbit total capacity organized as 32G x 8 to provide high-density non-volatile storage.
  • Technology NAND flash using MLC (multi-level cell) technology for non-volatile data retention.
  • Interface Parallel memory interface for integration with parallel memory controllers and host systems.
  • Voltage Supply Operates from 2.7 V to 3.6 V, supporting typical 3.3 V system rails.
  • Package & Mounting Available in a 48-TFSOP (0.724", 18.40 mm width) package; supplier device package listed as 48-TSOP I and mounting type specified as Non-Volatile.
  • Operating Temperature Rated for ambient operation from -40°C to 85°C (TA), supporting a wide range of thermal environments.
  • Memory Format Provided as FLASH memory with a parallel interface and standard TSOP I package for system-level integration.

Typical Applications

  • Embedded storage systems — Parallel NAND flash for non-volatile storage in systems requiring 256 Gbit capacity.
  • Board-level memory expansion — Use in designs that need a high-density flash device in a 48-TSOP I footprint.
  • Industrial equipment — Non-volatile storage for equipment operating across the specified -40°C to 85°C ambient range.

Unique Advantages

  • High-density storage: 256 Gbit capacity enables consolidation of storage requirements into a single device.
  • Standard parallel interface: Simplifies integration with parallel memory controllers and existing parallel memory designs.
  • Wide supply compatibility: 2.7 V to 3.6 V operation accommodates common 3.3 V system architectures.
  • Industry temperature range: -40°C to 85°C rating supports deployment in a variety of ambient conditions.
  • Standard package footprint: 48-TFSOP (48-TSOP I) package matches standard board-level assembly processes and footprints.

Why Choose MT29F256G08CJAAAWP-ITZ:A TR?

The MT29F256G08CJAAAWP-ITZ:A TR is positioned for designs that require a high-density, parallel NAND flash solution in a standard 48-TSOP I package. Its 256 Gbit MLC NAND organization, broad supply voltage range, and -40°C to 85°C operating range make it suitable for systems that need compact non-volatile storage with straightforward integration.

This device is appropriate for engineers specifying scalable flash capacity in board-level designs that use parallel interfaces and standard TSOP footprints, offering a clear, verifiable specification set for procurement and system integration decisions.

Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F256G08CJAAAWP-ITZ:A TR.

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