MT29F256G08CEECBH6-12:C TR

IC FLASH 256GBIT PAR 152VBGA
Part Description

IC FLASH 256GBIT PAR 152VBGA

Quantity 28 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package152-VBGA (14x18)Memory FormatFLASHTechnologyFLASH - NAND (MLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.5V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging152-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08CEECBH6-12:C TR – IC FLASH 256GBIT PAR 152VBGA

The MT29F256G08CEECBH6-12:C TR is a 256 Gbit non-volatile NAND flash memory device implemented as MLC (multi-level cell) flash. It provides high-density parallel flash storage in a 152-VBGA (14×18) package suited for systems that require large onboard data or code storage with a parallel memory interface.

Key device attributes include a 32G × 8 memory organization, parallel interface operation at an 83 MHz clock rate, and a supply voltage range of 2.5 V to 3.6 V, optimized for integration into embedded and system designs with defined operating-temperature limits.

Key Features

  • Memory Type: Non-volatile NAND flash implemented as MLC (multi-level cell), providing higher density per die compared to single-level cell organizations.
  • Memory Organization & Size: 32G × 8 organization delivering a total memory capacity of 256 Gbit for large code or data storage requirements.
  • Interface & Performance: Parallel memory interface with a clock frequency of 83 MHz for synchronous parallel access.
  • Voltage Supply: Operates across a supply range of 2.5 V to 3.6 V, enabling compatibility with common system power rails.
  • Package & Mounting: 152-VBGA package (14×18) providing a compact BGA footprint for surface-mount PCB designs.
  • Operating Temperature: Rated for operation from 0°C to 70°C (TA), suitable for standard commercial-temperature applications.
  • Memory Format: FLASH, specifically organized as parallel NAND for use in parallel flash architectures.

Unique Advantages

  • High-density storage: 256 Gbit capacity supports large onboard code and data storage needs within a single device.
  • Parallel interface compatibility: 32G × 8 organization and parallel I/O facilitate integration into systems that use parallel flash memory architectures.
  • Flexible supply range: 2.5 V to 3.6 V operation allows use with multiple common system voltage rails.
  • Compact BGA footprint: 152-VBGA (14×18) package enables space-efficient PCB layouts for high-density designs.
  • Defined operating window: Specified 0°C to 70°C temperature range supports deployment in commercial-temperature environments.
  • MLC NAND technology: Multi-level cell implementation increases storage density per die for applications requiring large capacity.

Why Choose IC FLASH 256GBIT PAR 152VBGA?

The MT29F256G08CEECBH6-12:C TR is positioned for designs that require a high-capacity, parallel NAND flash device in a compact BGA package. Its 256 Gbit MLC architecture, 32G × 8 organization, and 83 MHz parallel interface make it suitable for systems needing significant non-volatile storage while operating within a 2.5 V–3.6 V power envelope and 0°C–70°C temperature range.

This device is appropriate for engineers and procurement teams targeting robust, high-density parallel flash integration where package footprint, supply compatibility, and a clearly defined operating range are important considerations.

If you would like pricing, availability, or a formal quote for the MT29F256G08CEECBH6-12:C TR, please request a quote or contact sales to discuss options and lead times.

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