MT29F256G08CECEBJ4-37ITR:E TR

The MT29F256G08CECEBJ4-37ITR:E TR is a 256 Gbit non-volatile NAND flash memory device using MLC technology with a parallel memory interface. It is organized as 32G x 8 and operates with a clock frequency of 267 MHz.

This device targets designs that require high-density parallel flash storage in a compact BGA package, offering a wide supply voltage range and industrial temperature support for reliable operation in varied environments.

Key Features

• Memory Architecture Non-volatile NAND FLASH using MLC technology, organized as 32G x 8 for a total memory size of 256 Gbit.
• Interface & Performance Parallel memory interface with a specified clock frequency of 267 MHz for synchronous operation.
• Voltage Operates from 2.7 V to 3.6 V, providing compatibility with common 3.3 V system rails.
• Temperature Range Rated for operation from -40°C to 85°C (TA), suitable for a range of ambient conditions.
• Package Supplied in a 132‑VBGA (12 × 18 mm) package for board-level mounting and high-density assembly.
• Memory Format & Organization FLASH memory format with 256 Gbit capacity and 32G x 8 organization for byte-wide access.

Typical Applications

• High-density embedded storage — Systems that require large non-volatile storage capacity in a compact package can use this parallel NAND device for code or data storage.
• Firmware and boot storage — The device’s FLASH format and large capacity suit storage of firmware and boot images where parallel access and high density are needed.
• Industrial systems — With an operating range of -40°C to 85°C and a 2.7–3.6 V supply range, it is applicable to industrial designs that need robust non-volatile memory.

Unique Advantages

• High storage density: 256 Gbit capacity enables consolidation of large data sets or multiple firmware images into a single device, reducing board complexity.
• Parallel interface compatibility: Parallel memory interface and 32G x 8 organization simplify integration with systems designed for byte-wide FLASH access.
• Compact BGA package: 132‑VBGA (12×18) provides a small PCB footprint for space-constrained designs while supporting high-density assembly.
• Broad supply range: 2.7 V to 3.6 V operation allows use with common 3.3 V systems and offers flexibility in power-supply design.
• Wide operating temperature: -40°C to 85°C rating supports deployment across varied ambient environments without additional thermal derating.

Why Choose IC FLASH 256GBIT PAR 132VBGA?

The MT29F256G08CECEBJ4-37ITR:E TR combines high-density MLC NAND flash with a parallel interface and a compact 132‑VBGA package, making it a suitable choice for designs that require large non-volatile storage in constrained board space. Its 2.7–3.6 V supply range and -40°C to 85°C operating window align with a broad set of embedded and industrial use cases.

Manufactured by Micron Technology Inc., this device is aimed at engineers and procurement teams seeking a verified NAND flash option for systems needing byte-wide parallel access, substantial storage capacity, and reliable operation across standard temperature ranges.

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