MT29F256G08CJABBWP-12IT:B TR
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 308 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CJABBWP-12IT:B TR – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08CJABBWP-12IT:B TR is a 256 Gbit non-volatile NAND flash memory device using MLC technology, organized as 32G × 8. It implements a parallel memory interface and operates from a 2.7 V to 3.6 V supply, provided in a 48-TSOP I package.
Key device-level specifications include a clock frequency of 83 MHz and an operating temperature range of −40°C to 85°C, making the device suitable for applications that require high-density parallel flash storage within those electrical and thermal limits.
Key Features
- Memory Type Non-volatile NAND flash memory using MLC (multi-level cell) technology, offering 256 Gbit of storage capacity.
- Memory Organization Organized as 32G × 8, providing an x8 memory bus configuration.
- Interface Parallel memory interface for direct byte-wide access consistent with the 32G × 8 organization.
- Clock Frequency Specified clock frequency of 83 MHz for timing reference of the parallel interface.
- Supply Voltage Operates from 2.7 V to 3.6 V, accommodating standard 3.3 V system rails.
- Package Supplied in a 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) surface-mount package.
- Operating Temperature Industrial temperature range: −40°C to 85°C (TA).
Unique Advantages
- High-density storage: 256 Gbit capacity enables compact designs that require large non-volatile memory.
- Byte-wide organization: 32G × 8 arrangement supports x8 parallel data paths for straightforward interfacing to parallel controllers.
- MLC NAND technology: Multi-level cell construction provides increased bits per cell within the specified capacity.
- Wide operating voltage: 2.7 V to 3.6 V supply range supports common 3.3 V system architectures.
- Industrial temperature range: −40°C to 85°C rating supports deployment in temperature-varied environments.
- Compact TSOP I package: 48-pin TSOP I footprint (0.724", 18.40 mm) for space-constrained board layouts.
Why Choose MT29F256G08CJABBWP-12IT:B TR?
This Micron Technology Inc. device provides a high-density, parallel NAND flash solution in a compact 48-TSOP I package, with MLC technology and a 32G × 8 organization for byte-wide interfacing. Its electrical and thermal specifications—2.7 V to 3.6 V supply and −40°C to 85°C operating range—allow integration into systems that require substantial non-volatile storage within those operating limits.
The MT29F256G08CJABBWP-12IT:B TR is appropriate for designs that specifically require a 256 Gbit parallel flash memory with the listed package, electrical and timing characteristics and is supplied by Micron Technology Inc.
Request a quote or contact sales to obtain pricing, lead time and ordering details for the MT29F256G08CJABBWP-12IT:B TR.
