MT29F256G08CKCABH2-12:A

The MT29F256G08CKCABH2-12:A is a 256 Gbit non-volatile NAND FLASH memory device from Micron Technology Inc. Implemented as MLC (multi-level cell) NAND with a parallel memory interface, it provides dense flash storage in a compact 100‑TBGA package.

It is suited for systems that require parallel flash storage with a defined operating range and supply flexibility, offering integration advantages through its parallel interface, defined clock frequency, and a small 100‑TBGA package footprint.

Key Features

• Core / Technology: NAND FLASH (MLC) non-volatile memory offering multi-level cell storage architecture for increased density.
• Capacity & Organization: 256 Gbit capacity organized as 32G × 8, providing a high-density single-device storage option.
• Interface & Performance: Parallel memory interface with a specified clock frequency of 83 MHz to match parallel bus implementations.
• Power: Operating supply range of 2.7 V–3.6 V for compatibility with common system power rails.
• Package: 100‑TBGA package (12×18) for compact board-level integration.
• Environmental / Temperature: Rated for an ambient operating temperature of 0 °C–70 °C (TA).

Typical Applications

• Embedded storage systems: Use as on-board non-volatile flash storage where a parallel interface and 256 Gbit capacity are required.
• Consumer electronics: Integration into devices that accept parallel NAND FLASH in a compact 100‑TBGA package.
• Industrial equipment (commercial temperature): Suitable for systems operating within the 0 °C–70 °C ambient range that need high-density parallel flash memory.

Unique Advantages

• High density storage: 256 Gbit capacity enables large data storage in a single device, reducing board-level component count.
• Parallel interface compatibility: Parallel memory interface and 83 MHz clock frequency support legacy and parallel-bus system designs.
• Compact packaging: 100‑TBGA (12×18) package helps minimize PCB area for space-constrained designs.
• Flexible supply range: 2.7 V–3.6 V supply range allows use with common system power rails.
• MLC NAND technology: Multi-level cell architecture provides increased storage density per die.
• Defined operating range: Specified 0 °C–70 °C ambient operating range supports commercial-temperature applications.

Why Choose IC FLASH 256GBIT PAR 100TBGA?

The MT29F256G08CKCABH2-12:A positions itself as a dense, parallel NAND FLASH solution that balances capacity, package density, and interface simplicity. Its 256 Gbit MLC memory organized as 32G × 8, combined with a 100‑TBGA package and a defined 2.7 V–3.6 V supply range, makes it appropriate for designs that need high-capacity non-volatile storage in a compact form factor.

This device is suitable for teams and projects targeting embedded or consumer designs that require parallel flash integration and a commercial ambient temperature range. The combination of capacity, parallel interface, and compact package supports long-term design scalability where a single-device high-density flash solution is preferred.

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