MT29F256G08CMCABJ2-10RZ:A
| Part Description |
IC FLASH 256GBIT PAR 132TBGA |
|---|---|
| Quantity | 1,672 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCABJ2-10RZ:A – IC FLASH 256GBIT PAR 132TBGA
The MT29F256G08CMCABJ2-10RZ:A is a 256 Gbit non-volatile NAND FLASH memory device employing MLC flash technology with a 32G × 8 organization. It provides parallel memory access with a specified clock frequency and operates across a standard single-supply voltage range.
Built for systems that require high-density parallel NAND storage, this device combines large capacity, a parallel interface, and defined environmental and electrical parameters to support integration into a wide range of electronic designs.
Key Features
- Memory Technology and Type FLASH – NAND (MLC) non-volatile memory providing multi-level cell storage.
- Density & Organization 256 Gbit total capacity organized as 32G × 8 to present byte-wide parallel access.
- Interface & Performance Parallel memory interface with a clock frequency specified at 100 MHz for synchronous operation.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common single-supply system designs.
- Operating Temperature Device temperature range specified as 0°C to 70°C (TA).
- Package Supplied in a 132-TBGA (12 × 18) package to support board-level integration.
Typical Applications
- Parallel NAND storage systems — Acts as a high-density non-volatile memory element where parallel flash storage is required.
- Embedded memory subsystems — Provides mass storage for embedded designs that accept a parallel flash interface and the specified supply/temperature ranges.
- Board-level integration — Suited for systems designed to accommodate a 132-TBGA (12×18) package and standard 3.3 V-class power rails.
Unique Advantages
- High capacity in a compact form: 256 Gbit density in a 132-TBGA package supports large storage needs while maintaining a compact board footprint.
- Byte-wide organization: 32G × 8 configuration simplifies parallel data access and integration with byte-oriented controllers.
- Wide supply tolerance: 2.7 V to 3.6 V operation fits common 3.3 V systems, reducing power-rail complexity.
- Defined operating limits: Temperature range specified as 0°C to 70°C and a 100 MHz clock frequency provide clear integration parameters for system design.
- MLC NAND technology: Multi-level cell FLASH offers greater bits-per-cell density for increased storage capacity per package.
Why Choose IC FLASH 256GBIT PAR 132TBGA?
The MT29F256G08CMCABJ2-10RZ:A (IC FLASH 256GBIT PAR 132TBGA) is positioned for designs that require large-capacity, parallel-access NAND storage with clearly specified electrical and thermal ranges. Its 32G × 8 organization, MLC technology, and 132-TBGA package make it appropriate for systems designed around parallel flash memory and standard 3.3 V-class power rails.
This device is suitable for engineers and procurement teams seeking a high-density parallel NAND component with explicit specifications for clock frequency, supply voltage, and operating temperature to support predictable integration and long-term design planning.
Request a quote or submit an inquiry to obtain pricing and availability information for the MT29F256G08CMCABJ2-10RZ:A.
