MT29F256G08CMCDBJ5-6R:D TR
| Part Description |
IC FLASH 256GBIT PAR 132TBGA |
|---|---|
| Quantity | 418 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F256G08CMCDBJ5-6R:D TR – IC FLASH 256GBIT PAR 132TBGA
The MT29F256G08CMCDBJ5-6R:D TR is a 256 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements multi-level cell (MLC) NAND architecture organized as 32G × 8 with a parallel memory interface.
This device is specified for operation from 0°C to 70°C with a supply voltage range of 2.7 V to 3.6 V, and is offered in a 132-TBGA (12×18) package for board-level integration.
Key Features
- Memory Type Non-volatile FLASH using NAND (MLC) technology, providing 256 Gbit of storage organized as 32G × 8.
- Interface & Organization Parallel memory interface supporting byte-wide organization (32G × 8) for parallel access patterns.
- Performance Clock frequency specified at 167 MHz to define timing for the device's parallel interface.
- Power Operates over a supply voltage range of 2.7 V to 3.6 V, suitable for common 3.3 V systems.
- Package Supplied in a 132-TBGA (12×18) package to support BGA-style mounting and board-level integration.
- Temperature Range Rated for ambient operating temperatures from 0°C to 70°C (TA), suitable for commercial temperature applications.
Unique Advantages
- High density storage: 256 Gbit capacity enables large non-volatile data storage in a single device, simplifying memory subsystem design.
- Parallel access format: Byte-wide (32G × 8) parallel organization with a 167 MHz clock frequency supports designs that use parallel NAND interfaces.
- Standard 3.3 V compatibility: 2.7 V to 3.6 V supply range aligns with common 3.3 V system rails for straightforward power integration.
- Board-level BGA package: 132-TBGA (12×18) package enables BGA mounting for compact footprint and reliable solder connections.
- Commercial temperature rating: 0°C to 70°C operating range fits typical commercial application environments.
Why Choose MT29F256G08CMCDBJ5-6R:D TR?
This Micron 256 Gbit NAND flash device offers a high-density, parallel FLASH solution with clearly specified electrical and environmental parameters. Its MLC NAND architecture, parallel organization, 167 MHz clocking, and 2.7 V–3.6 V supply range make it suitable for designs requiring large non-volatile storage within the defined commercial temperature range.
The device's 132-TBGA (12×18) packaging and Micron backing provide a straightforward option for board-level integration where a high-capacity parallel NAND flash is required.
Request a quote or submit an RFQ for part MT29F256G08CMCDBJ5-6R:D TR to get pricing and availability information for your next design.
