MT29F256G08EBCAGB16A3WC1-R

The MT29F256G08EBCAGB16A3WC1-R is a 256 Gbit non-volatile NAND flash die using TLC (triple-level cell) technology. It is organized as 32G × 8 and provides a parallel memory interface for integration into designs that require high-density flash storage in die form.

With a 333 MHz clock frequency, a supply voltage range of 2.7 V to 3.6 V, and an operating temperature range of 0 °C to 70 °C, this die targets applications and systems that need substantial non-volatile capacity with defined electrical and thermal operating windows.

Key Features

• Memory Core 256 Gbit total capacity implemented as 32G × 8 using TLC NAND flash technology for high-density non-volatile storage.
• Interface & Performance Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation in parallel memory designs.
• Power & Voltage Operates from 2.7 V to 3.6 V, allowing compatibility with systems using standard 3.0 V-class supplies.
• Package Supplied as a die (wafer-level/die form) for direct integration into custom assemblies or multi-die modules.
• Operating Conditions Specified operating ambient temperature range of 0 °C to 70 °C (TA).
• Memory Organization Logical organization specified as 32G × 8 to aid system memory mapping and integration planning.

Typical Applications

• Embedded Storage — Used where large non-volatile capacity in die form is required for embedded systems and custom modules.
• Firmware and Data Storage — Suitable for storing firmware images, system code, or large datasets in designs that accept a parallel NAND die.
• Module and Multi-Die Integration — Designed for use as a die when assembling multi-die packages or custom memory modules.

Unique Advantages

• High-density 256 Gbit capacity: Provides substantial non-volatile storage in a single die to meet high-capacity requirements.
• Parallel interface with 333 MHz clock: Enables synchronous parallel operation suitable for systems designed around parallel NAND memory.
• Wide supply voltage range: 2.7 V to 3.6 V supports a range of 3.0 V-class system power rails.
• Die form factor: Delivered as a die for direct integration into custom packages, stacked assemblies, or module-level designs.
• TLC NAND technology: Triple-level cell implementation offers increased bit density per cell for storage-efficient designs.

Why Choose MT29F256G08EBCAGB16A3WC1-R?

The MT29F256G08EBCAGB16A3WC1-R positions itself as a high-density NAND flash die option combining 256 Gbit capacity, a parallel interface, and TLC technology in a die form factor. Its defined electrical (2.7 V–3.6 V) and thermal (0 °C–70 °C) specifications make it suitable for designs that require predictable integration parameters.

Designed and manufactured by Micron Technology Inc., this device is appropriate for designers and integrators building custom memory modules, multi-die assemblies, or embedded systems that need large non-volatile storage implemented as a die. Its combination of capacity, interface, and package form supports long-term design planning where die-level integration is required.

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