MT29F256G08EECBBJ4-6:B TR

The MT29F256G08EECBBJ4-6:B TR is a 256 Gbit non-volatile NAND flash memory device using TLC technology, organized as 32G × 8. It provides parallel memory access in a compact 132‑VBGA (12x18) package and operates from a 2.7 V to 3.6 V supply.

This device is suited for designs that require high-density parallel flash storage and operate within a commercial temperature range of 0°C to 70°C. Its combination of density, parallel interface, and standard voltage range makes it applicable to a variety of embedded and consumer-oriented storage implementations.

Key Features

• Memory Type & Technology Non-volatile NAND flash using TLC (triple-level cell) technology, providing 256 Gbit of storage capacity organized as 32G × 8.
• Interface Parallel memory interface for direct parallel data access suitable for systems designed around parallel flash topologies.
• Performance Clock frequency rating of 167 MHz to support device timing and system integration requirements.
• Power Operates from a single supply range of 2.7 V to 3.6 V, compatible with common 3.0 V and 3.3 V system domains.
• Package & Mounting Packaged in a 132‑VBGA (12x18) format for compact board-level integration and surface-mount assembly.
• Environmental/Operating Range Rated for commercial ambient operation from 0°C to 70°C (TA).

Typical Applications

• Embedded Storage — Provides high-density non-volatile memory for embedded systems that require parallel flash for firmware, code storage, or application data within commercial temperature environments.
• Consumer Electronics — Suitable for consumer devices needing large-capacity NAND flash with a parallel interface and a 2.7 V–3.6 V supply.
• Storage Modules — Can be used in custom storage modules or memory subsystems that leverage parallel NAND organization and a compact VBGA footprint.

Unique Advantages

• Large Storage Capacity: 256 Gbit density supports substantial code and data storage in a single device footprint.
• Parallel Interface Compatibility: Parallel memory interface simplifies integration with systems designed for parallel flash architectures.
• TLC NAND Technology: Triple-level cell NAND enables higher bit density within the device package.
• Standard Supply Range: 2.7 V to 3.6 V operation aligns with common 3.0 V and 3.3 V system power rails.
• Compact VBGA Package: 132‑VBGA (12x18) package provides a space-efficient option for board-level mounting.
• Commercial Temperature Support: Rated for 0°C to 70°C operating temperature for use in non-industrial, commercial environments.

Why Choose IC FLASH 256GBIT PAR 132VBGA?

The MT29F256G08EECBBJ4-6:B TR delivers a high-density, parallel NAND flash option in a compact 132‑VBGA package, combining a 256 Gbit capacity and TLC technology with a 2.7 V–3.6 V supply range. Its 167 MHz clock rating and 32G × 8 organization make it suitable for systems requiring parallel access to non-volatile storage within commercial temperature limits.

This device is well suited for designers and procurement professionals targeting embedded and consumer applications that need significant flash capacity, a parallel interface, and a compact surface-mount package. The straightforward specification set supports integration into existing parallel-flash designs while providing predictable electrical and thermal operating parameters.

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