MT29F32G08ABAAAM73A3WC1

The MT29F32G08ABAAAM73A3WC1 is a 32 Gbit non-volatile NAND flash die from Micron Technology. It implements single-level cell (SLC) NAND architecture in a 4G × 8 organization with a parallel interface, delivering a compact die form factor for integration into embedded storage designs that require on‑chip non-volatile memory.

Designed for systems operating at standard commercial temperatures, the device combines ONFI-compliant command support and advanced NAND commands to address firmware, data storage and system flash requirements where endurance, interface flexibility and integration density matter.

Key Features

• Memory Core — 32 Gbit capacity organized as 4G × 8 with single-level cell (SLC) NAND technology for non-volatile data storage.
• ONFI 2.2 Compliance & Command Set — Supports the ONFI NAND Flash Protocol and an advanced command set including program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane and multi-LUN operations, read unique ID and copyback.
• Page / Block / Plane Organization — Page size (×8): 8,640 bytes (8,192 + 448), block size: 128 pages (1,024K + 56K bytes), and 2 planes × 2,048 blocks per plane (device = 4,096 blocks for 32Gb).
• Synchronous and Asynchronous I/O — Synchronous operation up to timing mode 5 with DDR-capable 10 ns clock (read/write throughput per pin up to 200 MT/s); asynchronous I/O up to timing mode 5 with per-pin throughput up to 50 MT/s.
• Array Performance — Typical array timings include read page: 35 μs (max specified), program page: ~350 μs (typical), and erase block: ~1.5 ms (typical).
• Endurance & Data Retention — Rated endurance of 80,000 program/erase cycles with data retention and qualification information referenced in the datasheet.
• Power and I/O Voltage — VCC operating range 2.7 V to 3.6 V; VCCQ supported at 1.7–1.95 V and 2.7–3.6 V (per device configuration).
• Package & Temperature — Supplied as a die for direct integration; specified commercial operating temperature 0 °C to +70 °C (TA).

Typical Applications

• Embedded Storage — Firmware and persistent data storage in embedded systems that require a parallel NAND die for on‑board integration.
• Consumer Electronics — On‑die non‑volatile memory for consumer devices operating within the specified commercial temperature range.
• Memory Module Integration — Integration into custom memory modules or multi‑die solutions where a 32 Gbit parallel NAND die is required.

Unique Advantages

• ONFI 2.2 interoperability: Ensures compatibility with ONFI‑compliant controllers and tooling for standardized command and timing support.
• SLC NAND endurance: 80,000 program/erase cycles provide longevity for applications with frequent updates to flash content.
• Dual I/O modes: Both synchronous (DDR) and asynchronous interfaces allow designers to choose between higher throughput (up to 200 MT/s per pin) and legacy asynchronous operation (up to 50 MT/s per pin).
• Advanced NAND commands: Features such as program/read cache, multi‑plane and multi‑LUN operations, OTP and copyback reduce host overhead and enable efficient memory management.
• Compact die form: Supplied as a die for direct integration into custom assemblies or multi‑die packages, simplifying BOM when die‑level integration is required.

Why Choose MT29F32G08ABAAAM73A3WC1?

The MT29F32G08ABAAAM73A3WC1 positions itself as a purpose-built 32 Gbit SLC NAND die offering ONFI‑compliant interfaces, flexible synchronous/asynchronous I/O modes and a command set focused on efficient flash management. Its endurance rating and detailed array performance figures make it suitable for designs that require predictable program/erase behavior and control over memory operations.

This die is intended for designers and integrators who need a compact, high‑endurance NAND building block with standardized protocol support and advanced NAND features. With specified voltage ranges and commercial temperature operation, it supports integration into a wide range of board‑level storage solutions.

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