MT29F32G08ABAAAWP-ITZ:A TR
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 987 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 4 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABAAAWP-ITZ:A TR – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08ABAAAWP-ITZ:A TR is a 32 Gbit parallel NAND flash memory device organized as 4G × 8 and manufactured on SLC NAND technology. It provides asynchronous and synchronous I/O operation modes with ONFI 2.2 compliance and supports both standard and DDR synchronous timing.
Designed for industrial-temperature operation (−40°C to +85°C) and a wide supply range (VCC 2.7–3.6 V), this device targets embedded non-volatile storage applications requiring defined endurance, data retention, and performance characteristics in a 48‑pin TSOP I package.
Key Features
- Memory Core SLC NAND organization, 32 Gbit total capacity with 4G × 8 memory organization and device size documented as 32Gb (4096 blocks).
- Page, Block and Plane Geometry Page size x8: 8,640 bytes (8,192 + 448). Block size: 128 pages (1,024K + 56K bytes). Two planes with 2,048 blocks per plane.
- Interface Modes Supports asynchronous and synchronous I/O; ONFI 2.2‑compliant with synchronous timing up to mode 5 and asynchronous timing up to mode 5.
- Performance Metrics Synchronous clock rate specified at 10 ns (DDR) with read/write throughput per pin up to 200 MT/s; asynchronous throughput per pin up to 50 MT/s. Typical array timings: read page 35 µs, program page ~350 µs, erase block ~1.5 ms.
- Power Operating voltage range VCC: 2.7–3.6 V; VCCQ options: 1.7–1.95 V or 2.7–3.6 V.
- Reliability and Endurance Endurance specified at 80,000 program/erase cycles with data retention compliant to JESD47G; first block (block address 00h) shipped valid from factory.
- System Control and Features Supports advanced commands including program/read cache, multi-plane and multi-LUN operations, copyback, OTP mode, read unique ID, and provides an operation-status byte for software detection of completion and pass/fail conditions. RESET (FFh) required as first command after power-on.
- Package and Temperature Supplied in a 48‑TSOP I (48‑TFSOP, 18.40 mm width) package and specified for industrial ambient operation from −40°C to +85°C.
Typical Applications
- Industrial Embedded Storage Non-volatile program and data storage in industrial controllers and automation equipment where extended temperature range and endurance are required.
- Communications and Networking Firmware and configuration storage in networking modules and communication devices that leverage parallel NAND performance and reliability.
- Consumer/Industrial Firmware Storage Flash storage for system firmware, boot code and large-data logging where SLC endurance and defined page/block geometry simplify system-level error management.
Unique Advantages
- SLC NAND Endurance: 80,000 program/erase cycle specification supports demanding write/erase use cases and extends usable device life.
- Flexible I/O Modes: Asynchronous and synchronous operation with ONFI 2.2 compliance provides design flexibility for legacy parallel interfaces and higher‑speed synchronous designs.
- Defined Geometry for System Design: Explicit page, block and plane sizes (8,640‑byte pages; 128‑page blocks; 2 planes) enable predictable ECC and memory-management planning.
- Industrial Temperature Rating: −40°C to +85°C qualification supports deployment in temperature‑challenging environments without additional component-level qualification claims.
- Wide Supply Range: VCC 2.7–3.6 V with VCCQ options offers compatibility with a range of system power rails.
Why Choose MT29F32G08ABAAAWP-ITZ:A TR?
This MT29F32G08ABAAAWP-ITZ:A TR device combines SLC NAND endurance, well‑defined geometry, and flexible synchronous/asynchronous interfaces in a 48‑pin TSOP I package rated for industrial temperatures. It is suited to designs that require predictable performance numbers (read, program, erase timings), ONFI 2.2 protocol compatibility, and clear electrical and timing characteristics for system integration.
Engineers specifying this device benefit from documented endurance and retention data, standard NAND command support (including cache and multi‑plane operations), and a supply voltage range that aligns with common embedded system rails—enabling straightforward BOM and firmware management for long‑lifecycle products.
If you require availability details, pricing, or a formal quote for MT29F32G08ABAAAWP-ITZ:A TR, request a quote or contact sales to discuss lead times and order support.
