MT29F32G08ABAAAWP-Z:A

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 917 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08ABAAAWP-Z:A – IC FLASH 32GBIT PAR 48TSOP I

The MT29F32G08ABAAAWP-Z:A is a 32 Gbit parallel NAND flash memory device in a 48-pin TSOP I package. It implements NAND flash architecture with a 4G × 8 memory organization and supports both asynchronous and synchronous I/O operation modes.

Designed for embedded storage and firmware/data retention use, the device delivers flexible timing modes, SLC technology, and a commercial operating temperature range, providing a compact, high-density non-volatile memory option for board-level integration.

Key Features

  • Memory Core  32 Gbit NAND flash organized as 4G × 8 with SLC technology and support for one-time programmable (OTP) mode.
  • Organization & Capacity  Page size (x8): 8,640 bytes (8,192 + 448); block size: 128 pages; device size: 32Gb = 4,096 blocks; two planes with 2,048 blocks per plane.
  • Interface — Parallel / ONFI  Parallel memory interface with Open NAND Flash Interface (ONFI) 2.2 compliance and support for synchronous and asynchronous command sets.
  • Synchronous & Asynchronous Performance  Synchronous timing up to mode 5 with DDR clock rate 10 ns and up to 200 MT/s read/write throughput per pin; asynchronous timing up to mode 5 with up to 50 MT/s per pin.
  • Typical Array Performance  Read page: up to 35 μs (max); program page: ~350 μs (typ); erase block: ~1.5 ms (typ).
  • Reliability & Endurance  Endurance rated at 80,000 program/erase cycles and data retention compliant with JESD47G (see qualification report).
  • Power  Operating VCC supply range 2.7 V to 3.6 V; VCCQ supported at 1.7–1.95 V or 2.7–3.6 V (per device configuration).
  • Package & Temperature  48-TFSOP / 48-pin TSOP I package (0.724" / 18.40 mm width) and commercial operating temperature range 0 °C to +70 °C (TA).
  • Advanced Command & System Features  Supports program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback within a plane, read unique ID, and an operation status byte for software detection of completion and pass/fail conditions. RESET (FFh) is required as the first command after power-on.

Typical Applications

  • Consumer Electronics  Local firmware and content storage in consumer devices where compact, board-mounted flash is required.
  • Embedded Systems  On-board program and data storage for embedded controllers and single-board computer designs using a parallel NAND interface.
  • Networking & Communications Equipment  Firmware and configuration storage in networking modules and communications appliances that use parallel NAND memory.

Unique Advantages

  • High-density in a compact package: 32 Gbit capacity in a 48-pin TSOP I footprint enables high-capacity storage on space-constrained PCBs.
  • Flexible timing and interface modes: ONFI 2.2 compliance with both asynchronous and synchronous modes simplifies integration across legacy and higher-speed designs.
  • Performance scalability: Synchronous DDR operation up to 200 MT/s per pin and asynchronous operation up to 50 MT/s per pin allow designers to scale throughput to application needs.
  • Robust endurance: 80,000 program/erase cycles and JESD47G data retention qualification help support long-term field use where write endurance is critical.
  • System-level features: Multi-plane and multi-LUN commands, copyback, and status byte reporting facilitate advanced flash management and firmware control.
  • Standard voltage support: Broad VCC range (2.7–3.6 V) supports common 3.3 V systems and multiple VCCQ options for interface flexibility.

Why Choose IC FLASH 32GBIT PAR 48TSOP I?

The MT29F32G08ABAAAWP-Z:A positions itself as a high-density, board-mountable parallel NAND flash option that combines SLC NAND architecture with ONFI 2.2 interface flexibility. Its mix of synchronous and asynchronous timing modes, compact 48-TSOP package, and documented endurance and array performance make it suitable for designs that require reliable non-volatile storage with configurable throughput.

This device is appropriate for engineers specifying embedded firmware storage or high-capacity data storage in consumer and communications products where a parallel NAND interface and commercial temperature operation are required. Its endurance ratings and system features support applications that need long-term program/erase cycles and advanced flash management.

Request a quote or submit an inquiry for pricing and availability for the MT29F32G08ABAAAWP-Z:A to receive product-specific ordering information and lead-time details.

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