MT29F32G08ABAAAWP-Z:A
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 917 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABAAAWP-Z:A – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08ABAAAWP-Z:A is a 32 Gbit parallel NAND flash memory device in a 48-pin TSOP I package. It implements NAND flash architecture with a 4G × 8 memory organization and supports both asynchronous and synchronous I/O operation modes.
Designed for embedded storage and firmware/data retention use, the device delivers flexible timing modes, SLC technology, and a commercial operating temperature range, providing a compact, high-density non-volatile memory option for board-level integration.
Key Features
- Memory Core 32 Gbit NAND flash organized as 4G × 8 with SLC technology and support for one-time programmable (OTP) mode.
- Organization & Capacity Page size (x8): 8,640 bytes (8,192 + 448); block size: 128 pages; device size: 32Gb = 4,096 blocks; two planes with 2,048 blocks per plane.
- Interface — Parallel / ONFI Parallel memory interface with Open NAND Flash Interface (ONFI) 2.2 compliance and support for synchronous and asynchronous command sets.
- Synchronous & Asynchronous Performance Synchronous timing up to mode 5 with DDR clock rate 10 ns and up to 200 MT/s read/write throughput per pin; asynchronous timing up to mode 5 with up to 50 MT/s per pin.
- Typical Array Performance Read page: up to 35 μs (max); program page: ~350 μs (typ); erase block: ~1.5 ms (typ).
- Reliability & Endurance Endurance rated at 80,000 program/erase cycles and data retention compliant with JESD47G (see qualification report).
- Power Operating VCC supply range 2.7 V to 3.6 V; VCCQ supported at 1.7–1.95 V or 2.7–3.6 V (per device configuration).
- Package & Temperature 48-TFSOP / 48-pin TSOP I package (0.724" / 18.40 mm width) and commercial operating temperature range 0 °C to +70 °C (TA).
- Advanced Command & System Features Supports program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback within a plane, read unique ID, and an operation status byte for software detection of completion and pass/fail conditions. RESET (FFh) is required as the first command after power-on.
Typical Applications
- Consumer Electronics Local firmware and content storage in consumer devices where compact, board-mounted flash is required.
- Embedded Systems On-board program and data storage for embedded controllers and single-board computer designs using a parallel NAND interface.
- Networking & Communications Equipment Firmware and configuration storage in networking modules and communications appliances that use parallel NAND memory.
Unique Advantages
- High-density in a compact package: 32 Gbit capacity in a 48-pin TSOP I footprint enables high-capacity storage on space-constrained PCBs.
- Flexible timing and interface modes: ONFI 2.2 compliance with both asynchronous and synchronous modes simplifies integration across legacy and higher-speed designs.
- Performance scalability: Synchronous DDR operation up to 200 MT/s per pin and asynchronous operation up to 50 MT/s per pin allow designers to scale throughput to application needs.
- Robust endurance: 80,000 program/erase cycles and JESD47G data retention qualification help support long-term field use where write endurance is critical.
- System-level features: Multi-plane and multi-LUN commands, copyback, and status byte reporting facilitate advanced flash management and firmware control.
- Standard voltage support: Broad VCC range (2.7–3.6 V) supports common 3.3 V systems and multiple VCCQ options for interface flexibility.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08ABAAAWP-Z:A positions itself as a high-density, board-mountable parallel NAND flash option that combines SLC NAND architecture with ONFI 2.2 interface flexibility. Its mix of synchronous and asynchronous timing modes, compact 48-TSOP package, and documented endurance and array performance make it suitable for designs that require reliable non-volatile storage with configurable throughput.
This device is appropriate for engineers specifying embedded firmware storage or high-capacity data storage in consumer and communications products where a parallel NAND interface and commercial temperature operation are required. Its endurance ratings and system features support applications that need long-term program/erase cycles and advanced flash management.
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