MT29F32G08ABAAAWP:A TR

The MT29F32G08ABAAAWP:A TR is a 32 Gbit non-volatile NAND flash memory device in a 48-TSOP I package. It implements SLC NAND architecture with parallel and synchronous/asynchronous I/O options, designed for applications requiring high-endurance, on-board flash storage in a commercial temperature range.

Key Features

• Memory Type & Capacity — 32 Gbit NAND flash organized as 4G × 8, with page size 8,640 bytes (8,192 + 448 bytes) and block size of 128 pages.
• Technology — Single-level cell (SLC) NAND offering the endurance characteristics specified in the datasheet.
• Interface — Parallel memory interface supporting both asynchronous and synchronous modes and ONFI 2.2-compliant command set.
• Performance (Synchronous) — Synchronous I/O up to timing mode 5 with DDR clock rate 10 ns and read/write throughput per pin up to 200 MT/s; data strobe (DQS) signals provided for synchronous data alignment.
• Performance (Asynchronous) — Asynchronous I/O up to timing mode 5 with read/write throughput per pin up to 50 MT/s; typical array timings include read page 35 µs (max), program page 350 µs (typ), and erase block 1.5 ms (typ).
• Power — Operating supply voltage range VCC: 2.7–3.6 V; VCCQ supported at 1.7–1.95 V and 2.7–3.6 V.
• Advanced Command Set — Supports program cache, read cache (sequential and random), OTP mode, multi-plane and multi-LUN operations, read unique ID, and copyback operations.
• Reliability & Endurance — Endurance rated at 80,000 program/erase cycles; data retention compliant with JESD47G as noted in the datasheet.
• Operational Notes — RESET (FFh) is required as the first command after power-on; operation status byte provides software methods to detect operation completion and pass/fail conditions.
• Package & Temperature — Supplied in a 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) package and specified for commercial operation from 0°C to +70°C.

Unique Advantages

• ONFI 2.2 Compliance: Ensures a standardized NAND command and timing interface for interoperability with compatible controllers.
• SLC Endurance: 80,000 program/erase cycles provide a measurable endurance profile suitable for write-intensive storage use cases.
• Flexible I/O Modes: Support for both asynchronous and high-speed synchronous DDR modes (with DQS) enables designers to balance throughput and system complexity.
• Comprehensive Command Set: Built-in features such as multi-plane commands, program/read caches, and OTP mode enable advanced flash management and efficient data handling.
• Wide Supply Options: Multiple VCCQ options (1.7–1.95 V and 2.7–3.6 V) and VCC 2.7–3.6 V allow compatibility with a range of system voltage domains.

Why Choose IC FLASH 32GBIT PAR 48TSOP I?

The MT29F32G08ABAAAWP:A TR delivers a 32 Gbit SLC NAND flash solution that combines high endurance, flexible I/O modes, and a compact 48-TSOP I package for commercial-temperature embedded storage designs. Its ONFI 2.2 compliance and advanced command features enable robust integration into systems that require deterministic flash behavior and software-managed status reporting.

This device is appropriate for designs that need proven endurance and predictable array performance (read, program, erase timing) while operating within a 0°C to +70°C ambient range. The combination of synchronous DDR capability and comprehensive flash commands supports scalable throughput and efficient memory management in board-level implementations.

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