MT29F32G08ABCABH1-10ITZ:A TR

The MT29F32G08ABCABH1-10ITZ:A TR is a 32 Gbit non-volatile NAND flash memory in a 100-ball VBGA package. It implements parallel NAND architecture with a 4G × 8 organization and is designed for embedded storage where synchronous and asynchronous NAND performance and industrial temperature operation are required.

Key value propositions include SLC NAND technology, support for ONFI 2.2 protocol features, and a voltage range suitable for common 3.3 V systems, making it suitable for industrial embedded data storage and code storage applications that require robust endurance and broad operating temperature.

Key Features

• Memory Type & Capacity — 32 Gbit NAND flash organized as 4G × 8, provided as FLASH memory for non-volatile embedded storage.
• Cell Technology — Single-level cell (SLC) technology as documented in the device family datasheet.
• Interfaces & Performance — Parallel memory interface with listed clock frequency of 100 MHz; device family supports synchronous I/O up to timing mode 5 and asynchronous I/O up to timing mode 5 as described in the datasheet.
• ONFI Compliance — Open NAND Flash Interface (ONFI) 2.2-compliant features are included in the device family.
• Read/Program/Erase Performance (Device Family) — Array performance examples from the datasheet: read page up to 35 μs (max), program page approximately 350 μs (typical), erase block approximately 1.5 ms (typical).
• Organization & Memory Geometry — Page size for x8 organization: 8,640 bytes (8,192 + 448); block size: 128 pages (1,024K + 56K bytes); device plane configuration and block counts specify 4,096 blocks for the 32Gb device.
• Advanced Command Set — Features documented include program cache, read cache sequential/random, OTP mode, multi-plane and multi-LUN operations, read unique ID, copyback and operation status reporting.
• Operating Voltage — VCC operating range 2.7–3.6 V; VCCQ options include 1.7–1.95 V and 2.7–3.6 V per datasheet information.
• Package & Mechanical — 100-ball VBGA package (supplier package: 100-VBGA, 12 × 18 mm) for high-density board mounting.
• Temperature Range — Industrial-grade operation documented: –40 °C to +85 °C (TA).
• Reliability & Endurance (Device Family) — Endurance specified at 80,000 program/erase cycles for the device family; data retention and qualification reference provided in the datasheet.

Typical Applications

• Industrial Embedded Storage — Non-volatile 32 Gbit storage for firmware, logging, and data buffering in industrial systems that operate across –40 °C to +85 °C.
• Consumer and Computing Devices — Parallel NAND for system code storage and mass storage where a 100-ball VBGA footprint and 3.3 V supply are compatible with board designs.
• Data Logging and Edge Devices — SLC NAND endurance and the documented program/erase characteristics support use in devices that require frequent write cycles.

Unique Advantages

• SLC Technology for Endurance: SLC cell design and a device-family endurance rating of 80,000 program/erase cycles provide longer write-cycle life compared with higher-density cell types.
• Protocol Interoperability: ONFI 2.2 compliance and an extensive command set (program/read caches, multi-plane operations, OTP) simplify integration with controllers that support ONFI.
• Broad Voltage Support: VCC range of 2.7–3.6 V with VCCQ options accommodates typical 3.3 V system rails and flexible I/O voltage configurations.
• Industrial Temperature Capability: Specified operation from –40 °C to +85 °C enables deployment in temperature-variable environments.
• High-Density, Board-Level Package: 100-ball VBGA (12 × 18 mm) offers compact, high-density mounting for space-constrained PCB designs.

Why Choose MT29F32G08ABCABH1-10ITZ:A TR?

The MT29F32G08ABCABH1-10ITZ:A TR positions itself as a robust parallel NAND flash option for designs that require 32 Gbit of non-volatile SLC storage, industrial temperature operation, and a compact 100-ball VBGA footprint. With ONFI 2.2 features and an extensive command set documented in the device family datasheet, integration with existing NAND controllers and firmware stacks is supported.

This device is suited to engineers and procurement teams specifying durable embedded storage for industrial and general-purpose applications where endurance, voltage compatibility, and proven NAND command capabilities matter. The datasheet provides the detailed timing, geometry, and command information needed for system validation and long-term deployment planning.

If you would like pricing, availability, or a formal quote for the MT29F32G08ABCABH1-10ITZ:A TR, please submit a request or quote inquiry to initiate the process.