MT29F32G08ABCABH1-10ITZ:A

The MT29F32G08ABCABH1-10ITZ:A is a 32 Gbit NAND flash memory device implementing single-level cell (SLC) technology in a parallel interface. It is organized as 4G × 8 and supplied in a 100-ball VBGA (12×18) package.

Designed for non-volatile storage in embedded and industrial designs, the device supports both asynchronous and synchronous I/O modes (ONFI 2.2-compliant) and provides robust endurance and array performance for read, program and erase operations.

Key Features

• Memory Architecture 32 Gbit capacity organized as 4G × 8 using single-level cell (SLC) NAND technology.
• Interface and Timing Parallel memory interface with support for asynchronous and synchronous I/O; ONFI 2.2-compliant and synchronous timing up to mode 5.
• Performance Clock support up to 100 MHz; synchronous read/write throughput up to 200 MT/s per pin and asynchronous throughput up to 50 MT/s per pin (datasheet-listed).
• Array Performance Typical/maximum array timings include read page 35 μs (max), program page 350 μs (typ), and erase block 1.5 ms (typ).
• Voltage Supply VCC operating range 2.7–3.6 V (datasheet also notes VCCQ options of 1.7–1.95 V and 2.7–3.6 V).
• Endurance and Retention Endurance rated at 80,000 program/erase cycles with data retention and qualification references documented in the datasheet.
• Package and Temperature 100-ball VBGA (12×18) package; industrial operating temperature range –40°C to +85°C (TA) supported.
• Advanced Command and Data Support Supports ONFI NAND command set plus advanced features such as program/read caches, multi-plane and multi-LUN operations, copyback, OTP mode and read unique ID.

Typical Applications

• Industrial Embedded Storage Non-volatile program and data storage in industrial controllers and factory automation where industrial temperature range and endurance are required.
• Consumer and Professional Embedded Devices Local NAND storage for firmware, application code, or media in embedded systems using a parallel NAND interface.
• Data-Intensive Read/Write Systems Systems requiring robust program/erase endurance and predictable array performance for repeated write cycles and block management.

Unique Advantages

• SLC Endurance: 80,000 program/erase cycles provide extended device lifetime for demanding write workloads.
• Flexible I/O Modes: Support for both asynchronous and synchronous ONFI 2.2-compliant operation enables designers to optimize throughput or compatibility.
• Compact VBGA Package: 100-ball VBGA (12×18) footprint offers a small form factor suitable for space-constrained PCBs.
• Industrial Temperature Range: –40°C to +85°C operation supports deployment in harsh or temperature-variable environments.
• Detailed Array Metrics: Published read, program and erase timings (35 μs, 350 μs, 1.5 ms) help system designers budget latency and performance.
• Advanced NAND Commands: Support for program/read caches, multi-plane and multi-LUN operations simplifies higher-throughput and multi-tasking storage strategies.

Why Choose IC FLASH 32GBIT PARALLEL 100VBGA?

The MT29F32G08ABCABH1-10ITZ:A positions itself as a durable, high-endurance SLC NAND solution with flexible interface options and defined array performance metrics. Its voltage range, industrial temperature rating, and compact 100-ball VBGA package make it suitable for embedded and industrial designs that require reliable non-volatile storage with predictable latencies.

This device is appropriate for engineers and procurement teams building systems that need SLC endurance, ONFI-compatible synchronous/asynchronous operation, and a small-package NAND solution with documented program/read/erase characteristics.

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