MT29F32G08ABCABH1-10Z:A TR
| Part Description |
IC FLASH 32GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 1,673 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABCABH1-10Z:A TR – IC FLASH 32GBIT PARALLEL 100VBGA
The MT29F32G08ABCABH1-10Z:A TR is a 32 Gbit parallel NAND Flash memory device based on Micron's NAND architecture. It is a non-volatile, single-level cell (SLC) NAND device organized as 4G x 8 with a 100-ball VBGA (12×18) package.
Designed for embedded storage in commercial-temperature systems, the device supports both asynchronous and synchronous I/O modes with ONFI 2.2 compliance and provides high endurance, multi-plane operations and cache features for efficient block and page management.
Key Features
- Memory Type & Organization — 32 Gbit NAND Flash organized as 4G × 8 (device size 32Gb: 4096 blocks); page size x8 is 8640 bytes (8192 + 448 bytes); block size is 128 pages (1024K + 56K bytes).
- Single-Level Cell (SLC) — SLC technology for the listed device family to support higher endurance compared with multi-level cell alternatives.
- Interface & Performance — Parallel NAND interface with ONFI 2.2 support; synchronous I/O up to timing mode 5 with a 10 ns clock (DDR) and read/write throughput per pin up to 200 MT/s; asynchronous mode supports up to 50 MT/s per pin. The part-level clock frequency is listed as 100 MHz.
- Read/Program/Erase Performance — Typical read page time 35 μs, typical program page 350 μs, and typical erase block time 1.5 ms.
- Voltage & Power — Operating VCC range 2.7–3.6 V; VCCQ supported at 1.7–1.95 V or 2.7–3.6 V per datasheet options.
- Package & Temperature — 100-ball BGA (100-VBGA, 12×18) package; commercial operating temperature range 0 °C to +70 °C.
- Advanced Command & Data Features — Program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, OTP mode, copyback, read unique ID, and DQS data strobe for synchronous data alignment.
- Reliability & Endurance — Data retention compliant with JESD47G and endurance specified at 80,000 program/erase cycles for the device family; operation status byte and write-protect status reporting.
- Factory & Power-On Behavior — First block (block address 00h) is valid at shipment; RESET (FFh) required as the first command after power-on.
Typical Applications
- Embedded Storage — High-density non-volatile storage for embedded boards and controllers requiring parallel NAND memory for firmware, logs, or file storage within commercial temperature ranges.
- Consumer Electronics — Solid-state storage in consumer devices where 32 Gbit capacity in a compact 100-ball BGA footprint is required.
- Industrial Data Logging (Commercial Temp) — Data capture and buffering in industrial or instrumentation equipment that operate within 0 °C to +70 °C.
Unique Advantages
- High-density 32 Gbit capacity: Enables substantial on-board non-volatile storage in a compact 100-ball BGA package to save PCB area.
- Flexible I/O modes: Supports both asynchronous and synchronous ONFI 2.2-compliant interfaces, allowing designers to optimize throughput or compatibility as needed.
- Robust endurance: SLC device family endurance of 80,000 program/erase cycles supports designs that require extended write durability.
- Advanced data-management features: Program/read caches, multi-plane and multi-LUN commands, and OTP capability simplify block-level management and system-level throughput.
- Wide operating voltage options: VCC and VCCQ voltage ranges provide flexibility for integration into systems with different I/O voltage domains.
Why Choose MT29F32G08ABCABH1-10Z:A TR?
The MT29F32G08ABCABH1-10Z:A TR positions itself as a high-density, SLC-based parallel NAND Flash device suitable for embedded and consumer applications that require reliable non-volatile storage in a compact BGA package. Its combination of ONFI 2.2 synchronous/asynchronous operation, advanced cache and multi-plane capabilities, and documented endurance and data-retention characteristics make it well suited for designs that need predictable performance and longevity within the specified commercial temperature and voltage ranges.
This device is appropriate for engineers and procurement teams building systems that prioritize footprint efficiency, endurance, and a versatile interface backed by Micron's NAND family specifications and documentation.
Request a quote or submit a quote to obtain pricing, lead-time and availability for the MT29F32G08ABCABH1-10Z:A TR.
