MT29F32G08ABCABH1-10:A TR
| Part Description |
IC FLASH 32GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 867 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABCABH1-10:A TR – IC FLASH 32GBIT PARALLEL 100VBGA
The MT29F32G08ABCABH1-10:A TR is a 32 Gbit non-volatile NAND flash memory device in a 100-ball VBGA (12×18 mm) package. It implements NAND flash architecture (4G × 8 organization) with parallel interface support and is specified for commercial operating temperatures (0°C to 70°C).
This device targets applications requiring compact, parallel NAND storage with industry-standard command and timing options. Its feature set includes synchronous and asynchronous I/O modes, advanced command capabilities, and a voltage supply range compatible with common system rails (2.7V–3.6V).
Key Features
- Memory Type & Capacity 32 Gbit NAND flash, organized as 4G × 8 (device size: 32Gb with 4096 blocks).
- Package 100-ball VBGA (12×18 mm) package for compact board implementation.
- Interface & Timing Parallel memory interface with a 100 MHz clock specification; supports synchronous I/O up to timing mode 5 and asynchronous I/O up to timing mode 5.
- Performance Metrics Synchronous read/write throughput per pin up to 200 MT/s (DDR); asynchronous read/write throughput per pin up to 50 MT/s. Typical array timings: read page 35 µs (max), program page 350 µs (typ), erase block 1.5 ms (typ).
- Advanced Command Set Supports ONFI 2.2-compliant command set and advanced commands including program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback, OTP mode, and read unique ID.
- Data Synchronization Data strobe (DQS) signals provide hardware synchronization of DQ in the synchronous interface; RESET (FFh) required as first command after power-on.
- Endurance & Reliability Endurance specified at 80,000 program/erase cycles; data retention and qualification details referenced in the datasheet.
- Memory Organization Details Page size (x8): 8,640 bytes (8,192 + 448); block size: 128 pages; plane configuration: 2 planes × 2,048 blocks per plane.
- Voltage Options VCC operating range 2.7–3.6V. VCCQ options include 1.7–1.95V and 2.7–3.6V.
Typical Applications
- Embedded Storage Use as parallel NAND storage in embedded systems that require a 32 Gbit non-volatile memory footprint.
- Firmware and Code Storage Suitable for storing firmware images and boot code where organized page/block structures and OTP capability are useful.
- Data Logging and Local Storage Applicable to commercial devices needing block-erase and page-program capabilities with defined endurance and retention characteristics.
Unique Advantages
- ONFI 2.2 Compliance Industry-standard command protocol for predictable integration with supporting controllers and tools.
- Synchronous and Asynchronous Flexibility Switch between synchronous DDR-like performance (up to 200 MT/s per pin) and asynchronous modes to match system timing requirements.
- Advanced Command Support Built-in program/read cache, multi-plane and multi-LUN commands and copyback capabilities enable higher effective throughput and efficient block management.
- High Endurance Specified endurance of 80,000 program/erase cycles supports demanding write/erase usage models within the stated commercial temperature range.
- Compact VBGA Package 100-ball VBGA (12×18 mm) allows higher-density PCB layouts while maintaining a robust BGA footprint.
- Broad Voltage Compatibility Support for 2.7–3.6V VCC and multiple VCCQ options simplifies integration into existing power architectures.
Why Choose MT29F32G08ABCABH1-10:A TR?
The MT29F32G08ABCABH1-10:A TR delivers a commercial-grade 32 Gbit NAND flash solution with both synchronous and asynchronous interfaces, advanced command capabilities, and clearly specified endurance and timing characteristics. Its ONFI 2.2 support and data strobe synchronization make it practical for systems requiring predictable parallel NAND behavior and performance scaling.
This device is well suited for engineers designing commercial embedded storage, firmware storage, or local data-logging functions who need a compact BGA package, flexible voltage options, and documented array performance and endurance. The provided datasheet details (timings, organization, and command support) enable engineering evaluation and system integration planning.
If you require pricing, availability, or technical clarification, request a quote or submit an information request to get detailed procurement and support options for MT29F32G08ABCABH1-10:A TR.
