MT29F32G08AFACAWP-ITZ:C
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 606 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08AFACAWP-ITZ:C – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08AFACAWP-ITZ:C is a 32 Gbit NAND flash memory organized as 4G x 8 in a parallel interface, offered in a 48-TSOP I package. It implements single-level cell (SLC) NAND architecture and supports both asynchronous and synchronous operation modes.
Designed for embedded non-volatile storage in environments requiring industrial temperature range and high write endurance, the device targets applications that need reliable block- and page-level NAND storage with flexible timing and advanced command support.
Key Features
- Memory Architecture 32 Gbit capacity organized as 4G × 8 (page size and block architecture detailed in datasheet), implemented as single-level cell (SLC) NAND for endurance and data retention characteristics.
- Performance Read page time up to 35 μs (MAX), typical program page 350 μs, and typical erase block 1.5 ms. Endurance is specified at 80,000 program/erase cycles.
- Interface & Timing Parallel memory interface supporting asynchronous and synchronous I/O. ONFI 2.2 compliant with synchronous modes up to timing mode 5, DDR clock rate 10 ns, synchronous throughput up to 200 MT/s per pin and asynchronous throughput up to 50 MT/s per pin.
- Advanced Command Set Supports program cache, read cache sequential and random, one-time programmable (OTP) mode, multi-plane commands, multi-LUN operations, copyback, and read unique ID.
- System Integration Operation status byte provides software methods for completion and pass/fail detection; write-protect status and RESET (FFh) requirements are defined for power-on sequencing.
- Power & Voltage Core operating voltage VCC 2.7–3.6 V. VCCQ options include 1.7–1.95 V or 2.7–3.6 V for I/O signaling flexibility.
- Reliability & Quality Data retention and qualification references in the datasheet include JESD47G compliance; first block (block address 00h) is valid when shipped from the factory.
- Package & Temperature Range Supplied in a 48-TSOP I (48-TFSOP, 18.40 mm width) package and specified for industrial operation from –40 °C to +85 °C (TA).
Typical Applications
- Industrial Embedded Systems Non-volatile program and data storage for controllers and industrial instrumentation operating across –40 °C to +85 °C.
- Firmware and Boot Storage Persistent storage of firmware images and boot code where SLC endurance and defined block validity at shipment are required.
- Data Logging and Measurement Time-series or event logging systems that benefit from NAND block/ page operations and defined program/erase endurance.
- Storage for Embedded Devices General-purpose embedded storage where parallel NAND with synchronous/asynchronous timing options is needed.
Unique Advantages
- High SLC Endurance: 80,000 program/erase cycles provide a defined wear characteristic suitable for write-intensive embedded roles.
- Flexible I/O Timing: ONFI 2.2 support with synchronous and asynchronous modes enables higher throughput (up to 200 MT/s per pin synchronous) or compatibility with legacy timing.
- Advanced Command Support: Program cache, read-cache modes, multi-plane and copyback commands simplify media management and improve effective throughput.
- Industrial Temperature Rating: Specified operation from –40 °C to +85 °C for deployment in temperature-challenging environments.
- Voltage Options for I/O: VCCQ selections (1.7–1.95 V or 2.7–3.6 V) allow interface flexibility with different system voltage domains.
- Clear System Status Mechanisms: Operation status byte and write-protect status provide software-visible methods for completion detection and protection state.
Why Choose MT29F32G08AFACAWP-ITZ:C?
The MT29F32G08AFACAWP-ITZ:C delivers a combination of SLC endurance, flexible synchronous/asynchronous parallel interfaces, and industrial temperature operation that suits embedded designs requiring reliable non-volatile storage. Its advanced command set and clear status reporting support efficient integration into firmware and storage-management software.
This device is appropriate for engineers specifying NAND memory for industrial controllers, firmware/boot storage, and data-logging applications where long program/erase life, defined timing modes, and package-level options (48-TSOP I) are required.
Request a quote or submit a pricing and availability inquiry using the full part number MT29F32G08AFACAWP-ITZ:C to receive product-specific commercial details and lead-time information.