MT29F32G08AFACAWP-Z:C TR
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 644 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08AFACAWP-Z:C TR – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08AFACAWP-Z:C TR is a 32 Gbit parallel NAND flash memory device based on Micron's NAND architecture. It is a non-volatile FLASH (NAND) memory organized as 4G × 8 and offered in a 48‑TSOP I package for board-level integration.
Designed for high-density storage in commercial-temperature systems, the device supports asynchronous and synchronous I/O modes (ONFI 2.2‑compliant) and provides advanced NAND commands and caching features for improved read/write efficiency.
Key Features
- Memory & Organization 32 Gbit capacity organized as 4G × 8; device-level configuration includes 4096 blocks (32Gb density) and 2 planes × 2048 blocks per plane as documented for the family.
- Page, Block and Plane Geometry Page size (×8): 8640 bytes (8192 + 448); block size: 128 pages (1024K + 56K bytes); plane and block layouts support multi‑plane operations.
- Interface & Protocol Parallel NAND interface with ONFI 2.2 compliance; supports asynchronous and synchronous timing modes, with DQS strobe signals for synchronous data synchronization.
- Performance Metrics Synchronous read/write throughput up to 200 MT/s per pin (DDR); asynchronous throughput up to 50 MT/s per pin. Typical array timings: read page 35 µs (max), program page 350 µs (typ), erase block 1.5 ms (typ).
- Advanced Command Set Supports program cache, read cache (sequential and random), multi‑plane commands, multi‑LUN operations, copyback, OTP mode and read unique ID.
- Endurance & Reliability Endurance specified at 80,000 program/erase cycles; data retention compliant with JESD47G per the device family documentation.
- Power & Voltage Operating VCC range 2.7 V to 3.6 V; VCCQ supported at 1.7–1.95 V or 2.7–3.6 V depending on configuration.
- Package & Temperature Supplied in a 48‑TSOP I (48‑TFSOP) package (0.724" / 18.40 mm width). Specified commercial operating temperature: 0°C to +70°C (TA).
Typical Applications
- Embedded storage and firmware Parallel NAND and 32 Gbit density make the device suitable for storing firmware, boot code, and large read‑only datasets in commercial embedded systems.
- Consumer and multimedia devices High-capacity non‑volatile storage and read/write caching features support media storage and content buffering where a parallel NAND interface is required.
- Industrial commercial equipment Commercial-temperature systems requiring non‑volatile, high‑density NAND can leverage the device's endurance and advanced command set for data logging and application storage.
Unique Advantages
- High density in a compact TSOP package: 32 Gbit capacity in a 48‑pin TSOP I footprint enables high-density storage with a small board area impact.
- Flexible interface modes: Supports both asynchronous and synchronous ONFI 2.2 modes with DQS hardware strobe for easier timing alignment and higher throughput in synchronous mode.
- Advanced NAND features: Program/read caching, multi‑plane and multi‑LUN operations, copyback and OTP mode help optimize throughput and support complex flash management strategies.
- Validated endurance and retention: Documented endurance (80,000 P/E cycles) and JESD47G‑compliant data retention provide measurable reliability characteristics for lifecycle planning.
- Standard supply voltage range: 2.7 V–3.6 V VCC support aligns with common system power rails for simpler integration.
Why Choose MT29F32G08AFACAWP-Z:C TR?
The MT29F32G08AFACAWP-Z:C TR combines high-density 32 Gbit NAND storage with a parallel ONFI‑compatible interface and a compact 48‑TSOP package, delivering a practical option for commercial embedded and consumer systems that require non‑volatile mass storage. Its documented endurance, geometry (pages/blocks/planes), and advanced command set support robust flash management and performance tuning in system designs.
This device is suited to designs that need proven NAND features—such as program/read caching, multi‑plane operations and OTP—along with a standard power supply range and commercial operating temperature. It provides designers with measurable performance and reliability parameters to support product planning and integration.
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