MT29F32G08AFACAWP-Z:C TR

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 644 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08AFACAWP-Z:C TR – IC FLASH 32GBIT PAR 48TSOP I

The MT29F32G08AFACAWP-Z:C TR is a 32 Gbit parallel NAND flash memory device based on Micron's NAND architecture. It is a non-volatile FLASH (NAND) memory organized as 4G × 8 and offered in a 48‑TSOP I package for board-level integration.

Designed for high-density storage in commercial-temperature systems, the device supports asynchronous and synchronous I/O modes (ONFI 2.2‑compliant) and provides advanced NAND commands and caching features for improved read/write efficiency.

Key Features

  • Memory & Organization  32 Gbit capacity organized as 4G × 8; device-level configuration includes 4096 blocks (32Gb density) and 2 planes × 2048 blocks per plane as documented for the family.
  • Page, Block and Plane Geometry  Page size (×8): 8640 bytes (8192 + 448); block size: 128 pages (1024K + 56K bytes); plane and block layouts support multi‑plane operations.
  • Interface & Protocol  Parallel NAND interface with ONFI 2.2 compliance; supports asynchronous and synchronous timing modes, with DQS strobe signals for synchronous data synchronization.
  • Performance Metrics  Synchronous read/write throughput up to 200 MT/s per pin (DDR); asynchronous throughput up to 50 MT/s per pin. Typical array timings: read page 35 µs (max), program page 350 µs (typ), erase block 1.5 ms (typ).
  • Advanced Command Set  Supports program cache, read cache (sequential and random), multi‑plane commands, multi‑LUN operations, copyback, OTP mode and read unique ID.
  • Endurance & Reliability  Endurance specified at 80,000 program/erase cycles; data retention compliant with JESD47G per the device family documentation.
  • Power & Voltage  Operating VCC range 2.7 V to 3.6 V; VCCQ supported at 1.7–1.95 V or 2.7–3.6 V depending on configuration.
  • Package & Temperature  Supplied in a 48‑TSOP I (48‑TFSOP) package (0.724" / 18.40 mm width). Specified commercial operating temperature: 0°C to +70°C (TA).

Typical Applications

  • Embedded storage and firmware  Parallel NAND and 32 Gbit density make the device suitable for storing firmware, boot code, and large read‑only datasets in commercial embedded systems.
  • Consumer and multimedia devices  High-capacity non‑volatile storage and read/write caching features support media storage and content buffering where a parallel NAND interface is required.
  • Industrial commercial equipment  Commercial-temperature systems requiring non‑volatile, high‑density NAND can leverage the device's endurance and advanced command set for data logging and application storage.

Unique Advantages

  • High density in a compact TSOP package: 32 Gbit capacity in a 48‑pin TSOP I footprint enables high-density storage with a small board area impact.
  • Flexible interface modes: Supports both asynchronous and synchronous ONFI 2.2 modes with DQS hardware strobe for easier timing alignment and higher throughput in synchronous mode.
  • Advanced NAND features: Program/read caching, multi‑plane and multi‑LUN operations, copyback and OTP mode help optimize throughput and support complex flash management strategies.
  • Validated endurance and retention: Documented endurance (80,000 P/E cycles) and JESD47G‑compliant data retention provide measurable reliability characteristics for lifecycle planning.
  • Standard supply voltage range: 2.7 V–3.6 V VCC support aligns with common system power rails for simpler integration.

Why Choose MT29F32G08AFACAWP-Z:C TR?

The MT29F32G08AFACAWP-Z:C TR combines high-density 32 Gbit NAND storage with a parallel ONFI‑compatible interface and a compact 48‑TSOP package, delivering a practical option for commercial embedded and consumer systems that require non‑volatile mass storage. Its documented endurance, geometry (pages/blocks/planes), and advanced command set support robust flash management and performance tuning in system designs.

This device is suited to designs that need proven NAND features—such as program/read caching, multi‑plane operations and OTP—along with a standard power supply range and commercial operating temperature. It provides designers with measurable performance and reliability parameters to support product planning and integration.

Request a quote or submit a product inquiry to our sales team to get pricing, availability, and technical support for MT29F32G08AFACAWP-Z:C TR.

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