MT29F32G08CBACAL73A3WC1P
| Part Description |
IC FLASH 32GBIT PARALLEL DIE |
|---|---|
| Quantity | 1,188 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBACAL73A3WC1P – IC FLASH 32GBIT PARALLEL DIE
The MT29F32G08CBACAL73A3WC1P is a 32 Gbit non-volatile FLASH NAND memory device organized as 4G × 8 and provided in die form. It uses a parallel memory interface and is specified for operation with a 2.7 V to 3.6 V supply.
Designed for integration into systems that require parallel NAND storage, this die-format memory supports commercial-temperature operation from 0°C to 70°C and is offered by Micron Technology Inc.
Key Features
- Memory — 32 Gbit capacity organized as 4G × 8 to provide byte-wide storage density in a single die.
- Technology — FLASH − NAND non-volatile memory technology for persistent data storage.
- Interface — Parallel memory interface suitable for designs that require parallel NAND connectivity.
- Voltage — Operates from 2.7 V to 3.6 V, allowing use with common 3 V system rails.
- Package — Supplied as a die, enabling direct integration into custom packages or multi-die assemblies.
- Temperature Range — Commercial operating range specified from 0°C to 70°C (TA).
Typical Applications
- Parallel flash storage — Provides 32 Gbit of byte-wide NAND storage for systems requiring a parallel memory interface.
- Embedded memory integration — Die form factor supports custom packaging and integration into space-constrained or modular designs.
- Commercial-temperature systems — Suited for applications and devices that operate within a 0°C to 70°C ambient range.
Unique Advantages
- High-density non-volatile capacity: 32 Gbit organized as 4G × 8 delivers substantial storage in a single die footprint.
- Parallel interface compatibility: Byte-wide parallel connectivity supports legacy and specific parallel-NAND architectures.
- Flexible power range: 2.7 V to 3.6 V operation aligns with common system supply voltages for straightforward power integration.
- Die form factor for customization: Supplied as a die to enable bespoke packaging solutions and compact subsystem integration.
- Commercial-temperature rating: Specified 0°C–70°C operating range for typical commercial deployments.
Why Choose MT29F32G08CBACAL73A3WC1P?
The MT29F32G08CBACAL73A3WC1P positions itself as a straightforward, high-density NAND flash die for designs that need parallel, byte-wide non-volatile storage. Its 32 Gbit capacity, parallel interface, and 2.7 V–3.6 V supply range make it suitable for integration into custom modules and embedded systems operating in commercial temperature environments.
Manufactured by Micron Technology Inc., this die-format NAND offers a compact integration path for designers requiring persistent storage with clear electrical and thermal specifications, enabling predictable system integration and deployment.
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