MT29F32G08CBACAWP-IT:C

The MT29F32G08CBACAWP-IT:C is a 32 Gbit non-volatile NAND flash memory device organized as 4G × 8 with a parallel memory interface. It is supplied in a 48-TSOP I (48-TFSOP, 0.724", 18.40mm width) package and operates from a 2.7 V to 3.6 V supply.

This device is intended for systems that require parallel NAND flash storage with a wide operating temperature capability of −40°C to 85°C, providing a high-density memory option in a compact TSOP form factor.

Key Features

• Memory Type & Technology Non-volatile NAND flash memory providing 32 Gbit of storage capacity organized as 4G × 8.
• Interface Parallel memory interface for direct integration into systems designed for parallel FLASH connectivity.
• Voltage Supply Operates from 2.7 V to 3.6 V, supporting designs that use standard 3.3 V supply rails.
• Package Supplied in a 48-TSOP I package (48-TFSOP, 0.724", 18.40 mm width) for compact board-level integration.
• Operating Temperature Rated for operation from −40°C to 85°C (TA), enabling use across a broad temperature range.
• Memory Format & Organization FLASH memory, organized as 4G × 8 to deliver 32 Gbit total capacity for high-density storage needs.

Typical Applications

• Parallel Flash Storage — Integration as parallel non-volatile storage where a 32 Gbit flash device is required.
• Embedded System Memory — Use in embedded designs that need on-board NAND flash for application code or large data storage via a parallel interface.
• Industrial Equipment — Deployment in systems that require operation across −40°C to 85°C and standard 3.3 V supply rails.

Unique Advantages

• High-density storage: 32 Gbit capacity (4G × 8) provides substantial non-volatile memory in a single device, reducing the need for multiple components.
• Parallel interface simplicity: The parallel memory interface enables direct connection to controllers designed for parallel FLASH, simplifying integration.
• Wide supply voltage range: 2.7 V to 3.6 V operation supports common 3.3 V system architectures and provides flexibility in power design.
• Compact TSOP footprint: 48-TSOP I package (48-TFSOP, 0.724", 18.40 mm) offers a space-efficient option for board-level designs.
• Extended temperature capability: −40°C to 85°C rating supports deployment across a broad ambient temperature range.

Why Choose MT29F32G08CBACAWP-IT:C?

The MT29F32G08CBACAWP-IT:C positions itself as a high-density parallel NAND flash option combining 32 Gbit capacity with a compact 48-TSOP I package and a broad operating range. Its 2.7 V–3.6 V supply compatibility and −40°C to 85°C rating make it suitable for designs that require substantial non-volatile storage within constrained board space and varied environmental conditions.

This device is appropriate for engineers and procurement teams specifying parallel NAND FLASH for embedded systems or other applications that need verified capacity, standard voltage operation, and a compact package form factor.

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