MT29F32G08CBACAWP-Z:C TR

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 1,657 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08CBACAWP-Z:C TR – IC FLASH 32GBIT PAR 48TSOP I

The MT29F32G08CBACAWP-Z:C TR is a 32 Gbit parallel NAND flash memory device from Micron Technology Inc. It implements FLASH - NAND non-volatile memory with a 4G × 8 memory organization for byte-wide access.

Packaged in a 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) form factor, the device operates from a 2.7 V to 3.6 V supply and is specified for ambient temperatures from 0°C to 70°C, making it suitable for systems requiring high-density non-volatile storage with a parallel interface.

Key Features

  • Memory Technology NAND FLASH non-volatile memory for persistent data retention without power.
  • Capacity & Organization 32 Gbit memory organized as 4G × 8, supporting byte-wide data access.
  • Interface Parallel memory interface for integration into systems designed for parallel NAND connections.
  • Voltage Supply Operates across a 2.7 V to 3.6 V supply range to match common 3 V system rails.
  • Operating Temperature Specified for ambient operation from 0°C to 70°C (TA).
  • Package 48-TSOP I / 48-TFSOP package (0.724", 18.40 mm width) for standard PCB mounting footprints.
  • Manufacturer Micron Technology Inc.

Typical Applications

  • Embedded systems and controllers — High-density non-volatile storage for systems that require a parallel NAND interface and operate within the specified temperature and voltage ranges.
  • Firmware and boot code storage — Storing firmware images and boot code in a single 32 Gbit flash device with byte-wide organization.
  • Consumer electronics — On-board non-volatile data storage for devices matching the 0°C to 70°C ambient range and 2.7 V to 3.6 V supply.

Unique Advantages

  • High-density single-device storage: 32 Gbit capacity consolidates large storage needs into one component.
  • Byte-wide memory organization: 4G × 8 layout supports straightforward byte-oriented access patterns.
  • Parallel interface compatibility: Integrates with systems and controllers designed for parallel NAND connectivity.
  • Flexible supply range: 2.7 V to 3.6 V operation aligns with common 3 V system designs.
  • Standard TSOP form factor: 48-TSOP I package fits established PCB footprints for ease of integration.
  • Non-volatile FLASH NAND technology: Retains data without power, providing persistent storage for code and data.

Why Choose IC FLASH 32GBIT PAR 48TSOP I?

The MT29F32G08CBACAWP-Z:C TR offers a 32 Gbit parallel NAND flash solution in a standard 48-TSOP I package, combining high density and a byte-wide organization for straightforward integration into systems requiring non-volatile storage. Its 2.7 V to 3.6 V supply range and 0°C to 70°C ambient rating make it suitable for a range of designs that operate within these electrical and environmental parameters.

This device is appropriate for engineers and procurement teams specifying high-capacity parallel NAND memory from a recognized manufacturer, where a standard package footprint and defined operating conditions are important for design consistency and inventory planning.

Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F32G08CBACAWP-Z:C TR.

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