MT29F32G08CBADAL83A3WC1
| Part Description |
IC FLASH 32GBIT PARALLEL DIE |
|---|---|
| Quantity | 479 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBADAL83A3WC1 – IC FLASH 32GBIT PARALLEL DIE
The MT29F32G08CBADAL83A3WC1 is a 32 Gbit, parallel‑interface NAND flash memory delivered as a die. It implements FLASH‑NAND technology with a 4G × 8 memory organization and is supplied by Micron Technology Inc.
This die targets designs that require non‑volatile NAND storage with a parallel memory interface and supports operation from a 2.7 V to 3.6 V supply and an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type Non‑volatile FLASH (NAND) memory provided as a die for integration into custom assemblies.
- Density & Organization 32 Gbit capacity with a 4G × 8 memory organization suitable for high‑density storage at the die level.
- Interface Parallel memory interface allowing direct parallel die-level integration.
- Power Operates from a 2.7 V to 3.6 V supply voltage range.
- Package Supplied as a die (Supplier Device Package: Die) for OEM integration and module assembly.
- Operating Range Specified ambient operating temperature range of 0°C to 70°C (TA).
Typical Applications
- Embedded storage systems Use as on‑board non‑volatile NAND storage for firmware, code storage, or data retention in embedded designs.
- Board‑level die integration Integration into customer multi‑die packages, modules, or custom PCB assemblies where a bare die is required.
- Commercial electronics (0°C–70°C) Devices and systems operating within the specified ambient temperature range that require parallel NAND flash capacity.
Unique Advantages
- High storage density: 32 Gbit capacity in a single die enables compact, high‑capacity memory implementations.
- Die form factor for flexibility: Supplied as a die to support custom packaging, module assembly, or direct integration into advanced PCB layouts.
- Parallel interface: Parallel memory interface facilitates designs that require direct parallel access to NAND memory.
- Wide supply range: 2.7 V to 3.6 V operating voltage supports integration into designs with standard 3.3 V domains.
- Specified operating temperature: Rated for 0°C to 70°C ambient operation, aligning with commercial temperature requirements.
Why Choose IC FLASH 32GBIT PARALLEL DIE?
The MT29F32G08CBADAL83A3WC1 provides a straightforward, high‑density NAND flash die option from Micron Technology Inc., suitable for designs that require parallel‑access non‑volatile storage. Its 4G × 8 organization and 32 Gbit capacity make it appropriate for OEMs and integrators implementing die‑level memory solutions.
This die is positioned for applications where compact, high‑capacity NAND storage with a defined voltage range and commercial temperature rating is needed. Choosing this part supports long‑term integration strategies that require die form factor flexibility and a known set of electrical and environmental specifications.
Request a quote or submit an inquiry for MT29F32G08CBADAL83A3WC1 to obtain pricing and availability information.
