MT29F32G08CBADAL83A3WC1-M
| Part Description |
IC FLASH 32GBIT PARALLEL DIE |
|---|---|
| Quantity | 652 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBADAL83A3WC1-M – IC FLASH 32GBIT PARALLEL DIE
The MT29F32G08CBADAL83A3WC1-M is a 32 Gbit non-volatile NAND flash memory provided in a die form factor. It implements a parallel memory interface and is organized as 4G × 8 to deliver high-density storage in a die package.
This device is suited for designs that require parallel NAND flash storage with supply operation between 2.7 V and 3.6 V and an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile NAND flash memory providing persistent data storage.
- Density & Organization 32 Gbit capacity organized as 4G × 8 to support high-density storage requirements.
- Interface Parallel memory interface for die-level integration into systems requiring parallel NAND access.
- Voltage Supply Operates from 2.7 V to 3.6 V, enabling use with common 3 V system power rails.
- Package Supplied as a die for direct integration into custom packages, modules, or multi-die assemblies.
- Operating Temperature Specified ambient temperature range of 0°C to 70°C (TA).
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Embedded storage — Provides non-volatile parallel NAND memory capacity for embedded systems that require die-level flash integration.
- Firmware and code storage — Suitable for storing firmware or boot code where parallel NAND architecture is required.
- Custom modules and multi-die assemblies — Die form factor enables incorporation into custom package designs and module-level integration.
Unique Advantages
- High-density storage: 32 Gbit capacity addresses applications needing substantial non-volatile memory in a single die.
- Parallel interface: Parallel memory architecture supports designs that use parallel NAND access methods.
- Die-level integration: Die package enables direct integration into custom assemblies and compact module designs, reducing the need for separate packaged components.
- Flexible power range: 2.7 V to 3.6 V operation aligns with standard 3 V system power rails.
- Commercial temperature rating: 0°C to 70°C ambient range for typical commercial operating environments.
Why Choose MT29F32G08CBADAL83A3WC1-M?
The MT29F32G08CBADAL83A3WC1-M positions itself as a high-density parallel NAND flash die for designs that require persistent storage in a die form factor. Its 32 Gbit capacity, 4G × 8 organization, and parallel interface make it appropriate where die-level integration and parallel access are design drivers.
Manufactured by Micron Technology Inc., this device provides a straightforward specification set—capacity, interface, supply voltage, and operating temperature—for engineers and procurement teams evaluating parallel NAND die solutions for their projects.
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