MT29F32G08CBADBWP-12IT:D

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 484 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08CBADBWP-12IT:D – IC FLASH 32GBIT PAR 48TSOP I

The MT29F32G08CBADBWP-12IT:D is a 32 Gbit non-volatile FLASH NAND memory device with a 4G × 8 organization and parallel memory interface. It is offered in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) package and operates from 2.7 V to 3.6 V with an operating temperature range of −40°C to 85°C (TA).

This device is designed to deliver high-density parallel NAND storage with an 83 MHz clock frequency, targeting systems that require compact board-level parallel flash memory with defined voltage and temperature tolerances.

Key Features

  • Memory Technology & Capacity 32 Gbit FLASH - NAND memory organized as 4G × 8 for high-density non-volatile storage.
  • Interface Parallel memory interface for direct parallel bus integration.
  • Performance 83 MHz clock frequency to support timing needs of parallel flash implementations.
  • Power Wide supply range of 2.7 V to 3.6 V to accommodate typical 3 V system rails.
  • Package 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) supplier device package suitable for board-level mounting.
  • Operating Temperature Rated for −40°C to 85°C (TA), supporting extended ambient temperature applications.

Typical Applications

  • Parallel non-volatile storage Provides 32 Gbit parallel NAND flash for systems requiring onboard non-volatile memory.
  • Board-level memory expansion 48-TSOP I package supports compact board mounting when increased flash density is required.
  • Designs requiring wide voltage and temperature tolerance Operates from 2.7 V to 3.6 V and −40°C to 85°C for environments with varied supply and ambient conditions.

Unique Advantages

  • High-density capacity: 32 Gbit storage in a single device reduces the number of components needed for large flash footprints.
  • Parallel interface simplicity: Parallel memory interface enables direct integration with parallel memory controllers and legacy parallel designs.
  • Flexible supply range: 2.7 V to 3.6 V compatibility aligns with common 3 V system power domains.
  • Extended temperature operation: −40°C to 85°C rating supports use in systems exposed to a wide range of ambient temperatures.
  • Industry-standard package: 48-TSOP I (48-TFSOP) package provides a familiar form factor for board-level placement and assembly.
  • Clocked operation: 83 MHz clock frequency provides defined timing characteristics for parallel flash implementations.

Why Choose MT29F32G08CBADBWP-12IT:D?

The MT29F32G08CBADBWP-12IT:D is positioned for designs that require high-density parallel NAND flash in a standard 48-TSOP I package with clear electrical and thermal operating bounds. Its combination of 32 Gbit capacity, parallel interface, 2.7 V–3.6 V supply range, and −40°C to 85°C rating makes it appropriate for board-level implementations where these specific hardware parameters are required.

This device is well suited to engineering and procurement teams specifying a compact, high-capacity parallel NAND memory solution with defined clock, voltage, and temperature characteristics.

Request a quote or submit an inquiry for pricing and availability, lead times, and volume options for the MT29F32G08CBADBWP-12IT:D.

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