MT29F32G08CBADBWPR:D TR
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 323 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBADBWPR:D TR – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08CBADBWPR:D TR is a 32 Gbit non-volatile NAND flash memory device provided in a 48-TSOP I package. It implements a parallel flash memory architecture with a 4G × 8 memory organization and is intended for systems that require parallel NAND flash storage.
Key electrical and mechanical characteristics include a 2.7 V to 3.6 V supply range, a 48-TFSOP (0.724", 18.40 mm width) package footprint, and an ambient operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Type Non-volatile NAND flash memory providing persistent data storage without power.
- Density & Organization 32 Gbit capacity organized as 4G × 8 to support large binary storage in a compact device.
- Interface Parallel memory interface for systems designed around parallel flash buses.
- Voltage Supply Operates from 2.7 V to 3.6 V, enabling use with standard 3.3 V system rails.
- Package 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) surface-mount package for PCB implementations with TSOP footprints.
- Operating Temperature Specified ambient operating range of 0 °C to 70 °C (TA).
Unique Advantages
- Large, single-device storage: 32 Gbit capacity reduces the need for multiple devices when higher density non-volatile storage is required.
- Parallel interface simplicity: Parallel memory interface aligns with designs using parallel flash buses, simplifying integration into existing parallel systems.
- Standard supply compatibility: 2.7 V to 3.6 V supply range supports common 3.3 V system architectures without additional voltage translation.
- Compact TSOP packaging: 48-TSOP I footprint provides a space-efficient surface-mount option for board-level designs.
- Specified commercial temperature range: 0 °C to 70 °C operating window suitable for typical commercial-grade applications.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08CBADBWPR:D TR positions itself as a high-density parallel NAND flash option in a compact 48-TSOP I package, offering a straightforward integration path for designs that require non-volatile storage with a 4G × 8 organization. Its electrical specifications, including a 2.7 V–3.6 V supply range and defined 0 °C–70 °C operating range, make it suitable for commercial embedded systems that use parallel flash memory.
This device is appropriate for designers and procurement teams looking for a single-device 32 Gbit parallel NAND flash solution with a standard TSOP footprint, enabling simplified BOM and predictable electrical and thermal characteristics for product designs.
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