MT29F32G08CBADBWP-12IT:D TR

The MT29F32G08CBADBWP-12IT:D TR is a 32 Gbit non-volatile NAND flash memory device from Micron Technology Inc., organized as 4G × 8. It implements parallel FLASH NAND architecture to provide high-density storage in a standard 48-TSOP I package.

The device supports a parallel memory interface with a clock frequency of 83 MHz, operates from a 2.7 V to 3.6 V supply, and is specified for an ambient temperature range of -40°C to 85°C, making it suitable for board-level integration where a 48-TFSOP (0.724", 18.40 mm width) package is required.

Key Features

• Memory Capacity & Organization 32 Gbit density organized as 4G × 8 for high-capacity non-volatile storage.
• Technology FLASH - NAND non-volatile memory technology for persistent data retention.
• Interface & Performance Parallel memory interface with a clock frequency of 83 MHz for synchronous parallel operation.
• Power Operating voltage range of 2.7 V to 3.6 V to support common 3 V system rails.
• Operating Temperature Specified for -40°C to 85°C (TA) to cover a wide ambient temperature window.
• Package Available in a 48-TFSOP / 48-TSOP I package (0.724", 18.40 mm width) for compact board-level mounting.

Typical Applications

• Embedded Systems — Provides parallel NAND flash storage for embedded devices requiring persistent code or data storage in a compact TSOP package.
• Industrial Equipment — Suitable for industrial applications operating within -40°C to 85°C that need non-volatile memory with a 3 V supply range.
• Consumer Electronics — Can be used where 32 Gbit NAND flash in a 48-TSOP footprint is required for firmware, content, or data storage.
• Firmware and Boot Storage — Acts as non-volatile storage for system firmware and boot code in designs using a parallel memory interface.

Unique Advantages

• High-density storage: 32 Gbit capacity organized as 4G × 8 enables substantial onboard non-volatile memory in a single device.
• Parallel interface support: Parallel memory interface with an 83 MHz clock simplifies integration into systems that use parallel NAND architectures.
• Wide voltage compatibility: 2.7 V to 3.6 V supply range aligns with common 3 V system rails for straightforward power design.
• Extended ambient temperature range: Specified operation from -40°C to 85°C supports deployment across varied environmental conditions.
• Standard TSOP package: 48-TFSOP / 48-TSOP I package (18.40 mm width) provides a recognizable form factor for board-level assembly.

Why Choose IC FLASH 32GBIT PAR 48TSOP I?

The MT29F32G08CBADBWP-12IT:D TR positions itself as a high-density, parallel NAND flash option offering a clear set of electrical and packaging specifications for designers. Its 32 Gbit capacity, parallel interface at 83 MHz, and 48-TSOP I footprint make it a practical choice for systems that require substantial non-volatile memory in a compact package.

Engineers and procurement teams targeting designs that operate on 3 V rails and within a -40°C to 85°C ambient range can leverage this Micron-manufactured device for consistent form-factor integration and predictable electrical requirements.

Request a quote or contact sales for pricing, availability, and lead-time information for the MT29F32G08CBADBWP-12IT:D TR.