MT48LC16M8A2P-6A:L

The MT48LC16M8A2P-6A:L is a 128 Mbit synchronous DRAM organized as 16M × 8 with a parallel memory interface in a 54-pin TSOP II package. It operates as a fully synchronous SDRAM device with internal banks, programmable burst lengths and LVTTL-compatible inputs and outputs.

Designed for systems requiring a parallel SDRAM component, the device supports up to 167 MHz clock frequency (speed grade -6A), a 3.3 V ±0.3 V supply range, and an operating ambient temperature range of 0°C to 70°C, providing predictable timing and power characteristics for embedded memory subsystems.

Key Features

• Core / Memory Architecture 128 Mbit SDRAM organized as 16M × 8 with four internal banks for hidden row access and pipelined operation.
• Performance / Timing Speed grade -6A supports a clock frequency up to 167 MHz with access time of 5.4 ns (CL = 3). Programmable CAS latency and burst lengths of 1, 2, 4, 8 or full page.
• Refresh and Self-Refresh Supports Auto Refresh and Self Refresh modes with a 64 ms, 4,096-cycle refresh requirement.
• Interface Parallel memory interface with LVTTL-compatible inputs and outputs; fully synchronous operation with all signals registered on the positive clock edge.
• Power Single +3.3 V ±0.3 V power supply (3.0 V to 3.6 V specified) with standard and low-power self-refresh options listed in the device options.
• Package 54-pin TSOP II (0.400", 10.16 mm width) plastic package suitable for surface-mount assembly.
• Industry Compatibility Documented as PC100- and PC133-compliant in the product datasheet; timing options include PC100 and PC133 grades where specified.

Unique Advantages

• High-frequency operation: Support for up to 167 MHz clocking (speed grade -6A) and 5.4 ns access time delivers deterministic timing for synchronous memory designs.
• Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning of read/write bursts to match system data-transfer patterns.
• Banked architecture: Four internal banks and pipelined operation allow column address changes every clock cycle to improve throughput.
• Standard 3.3 V supply: Single +3.3 V ±0.3 V supply simplifies power domain design in systems using 3.3 V logic.
• Design-ready package: 54-TSOP II 400 mil package (10.16 mm width) supports common surface-mount assembly processes and footprint integration.
• Built-in refresh management: Auto Refresh and Self Refresh modes and documented refresh timing (64 ms / 4,096 cycles) simplify system refresh scheduling.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

This MT48LC16M8A2P-6A:L device is positioned for designs that require a synchronous, parallel 128 Mbit SDRAM with defined timing characteristics, a 3.3 V supply, and a compact 54-pin TSOP II footprint. Its banked, pipelined architecture, programmable burst lengths and documented PC100/PC133 timing options provide predictable behavior for memory subsystems.

Engineers specifying this component will benefit from explicit timing and refresh parameters, LVTTL-compatible I/O, and a package form-factor suited to surface-mount integration, making it appropriate for systems that require deterministic parallel SDRAM performance within the provided operating temperature and voltage ranges.

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