MT48LC16M8A2P-6A:L TR

The MT48LC16M8A2P-6A:L TR is a 128 Mbit synchronous DRAM organized as 16M × 8 with an internal four-bank architecture. It implements a parallel SDRAM interface and is provided in a 54‑pin TSOP II package for compact board-level memory implementations.

Designed for systems requiring PC100/PC133-class SDRAM features, the device delivers synchronous pipelined operation, programmable burst lengths and standard self-refresh options while operating from a 3.0 V–3.6 V supply and a commercial temperature range of 0 °C to 70 °C.

Key Features

• Core / Architecture 16M × 8 memory organization with four internal banks (4 Meg × 8 × 4 banks as listed in the datasheet).
• Memory Capacity 128 Mbit DRAM capacity in a parallel SDRAM format.
• Performance Supports PC100 and PC133 timing classes; -6A speed grade lists a clock frequency up to 167 MHz and an access time of 5.4 ns (CL = 3).
• Burst & Refresh Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge (including concurrent auto precharge) and auto-refresh modes with a 64 ms, 4,096-cycle refresh.
• Self-Refresh Supports standard and low-power self-refresh modes as noted in the device documentation.
• Interface / I/O Fully synchronous operation with all signals registered on the positive edge of the system clock and LVTTL‑compatible inputs and outputs.
• Timing Internal pipelined operation allows column address changes every clock cycle; write cycle time (word/page) is specified at 12 ns.
• Power Single-supply operation over a 3.0 V to 3.6 V range (documented as +3.3 V ±0.3 V in the datasheet).
• Package & Mounting 54‑pin TSOP II (0.400", 10.16 mm width) plastic package for surface-mount applications.
• Operating Range Commercial temperature grade: 0 °C to +70 °C (TA).

Typical Applications

• PC100/PC133-class memory systems — Use where PC100 or PC133 timing compatibility and synchronous DRAM features are required.
• Embedded memory subsystems — Surface-mount 54‑TSOP II package enables compact board layouts for embedded controllers and memory expansion.
• Buffered data storage — Programmable burst lengths and internal banks support burst transfers and pipelined column accesses for buffering and burst-oriented data paths.

Unique Advantages

• Parallel SDRAM architecture: Four internal banks and pipelined operation enable back-to-back column accesses and improved throughput in burst modes.
• PC100/PC133 compatibility: Documented compliance with PC100 and PC133 timing classes facilitates integration into systems designed around those standards.
• Flexible refresh and power options: Auto-refresh and both standard and low-power self-refresh modes provide design flexibility for power-managed systems.
• Compact TSOP II package: 54‑pin TSOP II (400 mil) form factor supports space-constrained PCB designs while maintaining parallel interface pinout.
• Established timing grades: -6A speed grade lists a high clock frequency option (up to 167 MHz) and a 5.4 ns access time (CL = 3) for latency-sensitive designs.
• Standard supply voltage: Operates from a single 3.0 V–3.6 V supply, matching common 3.3 V system rails.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

This MT48LC16M8A2P-6A:L TR device positions itself as a straightforward, industry-documented 128 Mbit SDRAM option for designs that require PC100/PC133-class synchronous memory in a small TSOP II package. Its combination of four internal banks, programmable burst lengths and documented timing grades supports designs that need deterministic burst performance and standard refresh behavior.

Use cases include embedded and system memory subsystems where a 3.3 V single-supply SDRAM with LVTTL-compatible I/O and commercial temperature operation is required. The device family documentation provides clear timing and functional details useful to engineering and procurement teams during system-level selection and integration.

If you need pricing or availability for MT48LC16M8A2P-6A:L TR, request a quote or submit an RFQ to receive detailed procurement information.