MT48LC16M8A2P-7E:G

The MT48LC16M8A2P-7E:G is a 128 Mbit SDR SDRAM organized as 16M × 8 with four internal banks. It is a fully synchronous parallel DRAM device designed for systems requiring PC100/PC133-compliant SDRAM at a 3.3 V supply range.

Built for applications that need predictable, pipelined memory access, this 54‑pin TSOP II packaged device delivers standard SDRAM capabilities such as programmable burst lengths, auto refresh and auto precharge to simplify memory control in embedded and system-level designs.

Key Features

• Core / Technology  SDR SDRAM; fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation for column address changes every clock cycle.
• Memory Organization  128 Mbit capacity configured as 16M × 8 with four internal banks for interleaved row accesses and reduced latency on consecutive operations.
• Performance  PC100- and PC133-compliant; specified clock frequency 133 MHz for the -7E speed grade, with CL = 2 (2-2-2 timing, 15 ns) as documented for the -7E grade.
• Timing  Access time listed at 5.4 ns and typical write cycle time (word/page) of 14 ns; supports programmable burst lengths of 1, 2, 4, 8 or full page.
• Refresh and Power  Auto refresh and self-refresh modes supported (standard and low-power options noted in the product family); 4096-cycle refresh supported per datasheet timing options.
• Electrical  Single-supply operation at 3.3 V ±0.3 V (listed as 3.0 V to 3.6 V); LVTTL-compatible inputs and outputs.
• Package and Temperature  54‑pin TSOP II (400 mil / 10.16 mm width) package; commercial temperature range 0 °C to +70 °C (TA).

Typical Applications

• PC100 / PC133 memory designs  Use in systems or modules requiring PC100/PC133-compliant parallel SDRAM performance and timings.
• Embedded system memory  Parallel SDRAM for embedded platforms that require a 128 Mbit SDRAM device with programmable burst and auto-refresh features.
• Legacy and industrial controller designs  Integration into controllers and systems operating within the commercial temperature range (0 °C to +70 °C) and a 3.3 V supply domain.

Unique Advantages

• PC100/PC133 compliance:  Enables straightforward integration into systems designed to target those SDRAM speed grades.
• Flexible burst control:  Programmable burst lengths (1, 2, 4, 8, full page) allow tuning of transfer granularity to match system access patterns.
• Banked architecture for throughput:  Four internal banks help hide row access and precharge operations, supporting efficient pipelined access.
• Simplified timing integration:  Fully synchronous operation with positive-edge clock registration reduces external timing complexity for the memory controller.
• Standard TSOP II package:  54‑pin TSOP II form factor (400 mil) provides a compact footprint for board-level designs targeting parallel SDRAM.

Why Choose MT48LC16M8A2P-7E:G?

The MT48LC16M8A2P-7E:G positions as a straightforward, standards-aligned 128 Mbit parallel SDRAM solution for designs requiring PC100/PC133 timing, 3.3 V operation and a compact 54‑pin TSOP II package. Its synchronous, pipelined architecture and four-bank organization deliver predictable behavior for systems that rely on burst transfers and auto-refresh management.

This device suits engineering teams and procurement looking for a documented, commercial-temperature SDRAM option with clear timing grades and industry-standard features to support legacy and embedded memory subsystems where 128 Mbit capacity and parallel SDRAM interface are required.

Please request a quote or submit an inquiry for pricing, lead times and availability for the MT48LC16M8A2P-7E:G.