MT48LC16M8A2P-7E:L

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,233 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC16M8A2P-7E:L – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC16M8A2P-7E:L is a 128 Mbit synchronous DRAM device organized as 16M × 8 with a parallel memory interface in a 54-pin TSOP II (0.400", 10.16 mm width) package. It implements SDR SDRAM architecture with internal pipelined operation, internal banks, and programmable burst lengths for synchronous data transfers.

Designed for PC100/PC133-compliant systems, the device targets applications requiring a 3.3 V single-supply SDRAM solution with a 133 MHz clock frequency and commercial operating range (0 °C to +70 °C).

Key Features

  • Memory Architecture 128 Mbit density organized as 16M × 8 with four internal banks to support concurrent row access and precharge hiding.
  • SDR SDRAM Performance PC100- and PC133-compliant SDR SDRAM. Specified clock frequency of 133 MHz and timing grade -7E supporting 2-2-2 CAS latency (CL = 15 ns) per the datasheet.
  • Flexible Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto-precharge, and auto-refresh (64 ms, 4096-cycle refresh for commercial/industrial options detailed in the datasheet).
  • Interface and Timing Fully synchronous operation with all signals registered on the positive clock edge; internal pipelined operation allows column-address changes every clock cycle.
  • Power Single-supply operation with VCC = 3.3 V ±0.3 V (specified voltage range 3.0 V to 3.6 V).
  • Package and Mounting 54-pin TSOP II package (0.400" / 10.16 mm width) intended for surface mounting in space-constrained board designs.
  • Operating Conditions Commercial operating temperature range of 0 °C to +70 °C and write cycle time (word page) of 14 ns as listed in product specifications.

Typical Applications

  • PC100/PC133 Memory Subsystems Use in systems targeting PC100/PC133-compliant SDRAM configurations where synchronous parallel DRAM is required.
  • Embedded Systems with Parallel SDRAM Board-level memory and buffering for embedded designs that require a 128 Mbit parallel SDRAM device in a TSOP II package.
  • High-Throughput Data Buffers Applications needing pipelined SDRAM operation and programmable burst lengths for sustained data transfer bursts.

Unique Advantages

  • Standards Compatibility: PC100 and PC133 compliance ensures the device aligns with established SDR SDRAM timing profiles referenced in the datasheet.
  • Synchronous, Pipelined Operation: Positive-edge clocked signaling and internal pipelining permit column address updates every clock cycle for predictable synchronous behavior.
  • Single 3.3 V Supply: Operates from a single 3.0 V to 3.6 V supply, simplifying power rail design and integration into 3.3 V systems.
  • Compact TSOP II Package: 54-pin TSOP II (0.400") footprint enables surface-mount deployment in space-constrained boards.
  • Advanced Memory Controls: Auto precharge, auto refresh, and selectable burst lengths reduce host controller complexity for common SDRAM operations.
  • Commercial Temperature Range: Specified for 0 °C to +70 °C operation to match standard commercial system environments.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC16M8A2P-7E:L delivers a synchronous, pipelined 128 Mbit SDRAM option in a compact 54-pin TSOP II package, offering PC100/PC133 timing compatibility and standard SDRAM control features such as programmable burst lengths, auto-precharge, and auto-refresh. Its single 3.3 V supply and parallel interface make it suitable for designs that require a straightforward SDRAM building block with predictable timing behavior.

This device is a practical choice for engineers specifying board-level SDRAM in commercial-temperature systems where a 16M × 8 organization, 133 MHz clock capability, and TSOP II mounting are required. The documented timing options and control modes support integration into existing SDRAM controller designs while keeping BOM and power-rail complexity low.

Request a quote or submit an inquiry to receive pricing and availability information for the MT48LC16M8A2P-7E:L for your next design.

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