MT48LC16M8A2P-7E:G TR

The MT48LC16M8A2P-7E:G TR is a 128 Mbit synchronous DRAM (SDR SDRAM) organized as 16M × 8 with four internal banks and a parallel memory interface. It is designed for systems requiring PC100/PC133-compliant SDRAM performance and predictable synchronous operation.

Key benefits include synchronous, pipelined operation with programmable burst lengths, standard refresh and self-refresh modes, and a compact 54-pin TSOP II package suitable for space-conscious commercial designs operating at 0°C to 70°C.

Key Features

• Core / Architecture Fully synchronous SDR SDRAM with pipelined internal operation; all signals registered on the positive edge of the system clock.
• Memory Organization 128 Mbit density organized as 16M × 8 with 4 internal banks, providing standard DRAM addressing and banked access.
• Performance Clock frequency up to 133 MHz (PC133-compliant) with specified access time of 5.4 ns and speed-grade timing targeting 2-2-2 or 3-3-3 CAS latencies depending on configuration. Write cycle time (word/page) specified at 14 ns.
• Data Transfer and Burst Programmable burst lengths of 1, 2, 4, 8 or full page; column address can be changed every clock cycle for pipelined transfers.
• Refresh and Power Modes Auto refresh and auto precharge supported; standard and low-power self-refresh modes available (low-power mode not available on AT devices). 64 ms/4096-cycle refresh supported for commercial devices.
• Electrical Single-supply operation at 3.0 V to 3.6 V (3.3 V ±0.3 V). LVTTL-compatible inputs and outputs.
• Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C.
• Interface Parallel memory interface suitable for legacy and standard synchronous DRAM system designs.

Typical Applications

• PC and legacy system memory Use in designs requiring PC100/PC133-compliant SDRAM modules or compatible synchronous DRAM devices.
• Embedded systems Parallel SDRAM for embedded controllers and boards that require deterministic, synchronous memory access and programmable burst transfers.
• Consumer and commercial electronics Memory for devices that operate within the 0°C to 70°C commercial temperature range and need a compact 54-pin TSOP II footprint.

Unique Advantages

• Predictable synchronous timing: Fully synchronous operation with registered inputs and pipelined access simplifies timing and system integration.
• Flexible burst transfers: Programmable burst lengths (1, 2, 4, 8, full page) allow designers to tune throughput and latency for application needs.
• Banked architecture for hidden latency: Internal banks enable row access/precharge hiding to improve effective throughput for interleaved accesses.
• Standard supply and signal levels: Operates from 3.0 V to 3.6 V with LVTTL-compatible I/O, matching common legacy SDRAM system requirements.
• Compact package footprint: 54-pin TSOP II (400 mil) package supports space-constrained board designs while maintaining standard pinout.

Why Choose MT48LC16M8A2P-7E:G TR?

The MT48LC16M8A2P-7E:G TR offers a commercially rated, PC100/PC133-compliant SDRAM solution with a 16M × 8 organization and four internal banks for efficient, pipelined memory access. Its support for programmable burst lengths, auto-refresh mechanisms and LVTTL-compatible I/O make it suitable for designs that require synchronous, predictable memory behavior in a compact TSOP II package.

This device is well suited to engineers and purchasing professionals specifying commercial-temperature SDRAM for embedded platforms, legacy system upgrades, and consumer or commercial electronics where a standard 3.3 V SDRAM solution is required.

Request a quote or submit a quotation request for MT48LC16M8A2P-7E:G TR through your preferred purchasing channel to confirm availability and lead times.